GeneSiC Semiconductor GA20SICP12-247

Номер детали
GA20SICP12-247
Производитель
GeneSiC Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-247AB
Технические
Нахождение ЧипаGA20SICP12-247.pdf
Описание
TRANS SJT 1200V 45A TO247AB
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order GA20SICP12-247 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that GA20SICP12-247 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the GA20SICP12-247. All suppliers must pass our qualification reviews before they can publish their products including GA20SICP12-247 on Нахождение Чипа; we pay more attention to the channels and quality of GA20SICP12-247 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the GA20SICP12-247 price and inventory displayed accurate?

The price and inventory of GA20SICP12-247 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of GA20SICP12-247?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GA20SICP12-247 we delivered, we will accept the replacement or return of the GA20SICP12-247 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GA20SICP12-247.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as GA20SICP12-247 pin diagram, GA20SICP12-247 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение GA50JT12-247 GA10JT12-263 GA05JT03-46 GA04JT17-247 GA16JT17-247
Номер детали GA50JT12-247 GA10JT12-263 GA05JT03-46 GA04JT17-247 GA16JT17-247
Производитель GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor
Packaging Tube Tube Tube Tube Tube
Series - - - - -
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType - - - - -
Technology SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss) 1200 V 1200 V 1200 V 1200 V 1200 V
Current-ContinuousDrain(Id)@25°C 45A (Tc) 45A (Tc) 45A (Tc) 45A (Tc) 45A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) - - - - -
RdsOn(Max)@IdVgs 50mOhm @ 20A 50mOhm @ 20A 50mOhm @ 20A 50mOhm @ 20A 50mOhm @ 20A
Vgs(th)(Max)@Id - - - - -
GateCharge(Qg)(Max)@Vgs - - - - -
Vgs(Max) - - - - -
InputCapacitance(Ciss)(Max)@Vds 3091 pF @ 800 V 3091 pF @ 800 V 3091 pF @ 800 V 3091 pF @ 800 V 3091 pF @ 800 V
FETFeature - - - - -
PowerDissipation(Max) 282W (Tc) 282W (Tc) 282W (Tc) 282W (Tc) 282W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

GA20SICP12-247 Актуальная информация

Включенные следующие детали "GA20SICP12-247" ISSI, Интегрированные Силиконовые Решения Инк GA20SICP12-247.

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