Infineon Technologies IPB80N03S4L-03ATMA1

Номер детали
IPB80N03S4L-03ATMA1
Производитель
Infineon Technologies
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PG-TO263-3-2
Технические
Нахождение ЧипаIPB80N03S4L-03ATMA1.pdf
Описание
N-CHANNEL POWER MOSFET
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IPB80N03S4L-03ATMA1 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IPB80N03S4L-03ATMA1 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IPB80N03S4L-03ATMA1. All suppliers must pass our qualification reviews before they can publish their products including IPB80N03S4L-03ATMA1 on Нахождение Чипа; we pay more attention to the channels and quality of IPB80N03S4L-03ATMA1 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IPB80N03S4L-03ATMA1 price and inventory displayed accurate?

The price and inventory of IPB80N03S4L-03ATMA1 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IPB80N03S4L-03ATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPB80N03S4L-03ATMA1 we delivered, we will accept the replacement or return of the IPB80N03S4L-03ATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB80N03S4L-03ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IPB80N03S4L-03ATMA1 pin diagram, IPB80N03S4L-03ATMA1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение IPP065N04NG BSF083N03LQG IPP230N06L3G BSB053N03LPG SPP80N06S209
Номер детали IPP065N04NG BSF083N03LQG IPP230N06L3G BSB053N03LPG SPP80N06S209
Производитель Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Packaging Bulk Bulk Bulk Bulk Bulk
Series OptiMOS™ OptiMOS™ OptiMOS™ OptiMOS™ OptiMOS™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V
Vgs(th)(Max)@Id 2.2V @ 45µA 2.2V @ 45µA 2.2V @ 45µA 2.2V @ 45µA 2.2V @ 45µA
GateCharge(Qg)(Max)@Vgs 75 nC @ 10 V 75 nC @ 10 V 75 nC @ 10 V 75 nC @ 10 V 75 nC @ 10 V
Vgs(Max) ±16V ±16V ±16V ±16V ±16V
InputCapacitance(Ciss)(Max)@Vds 5100 pF @ 25 V 5100 pF @ 25 V 5100 pF @ 25 V 5100 pF @ 25 V 5100 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 94W (Tc) 94W (Tc) 94W (Tc) 94W (Tc) 94W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

IPB80N03S4L-03ATMA1 Актуальная информация

Включенные следующие детали "IPB80N03S4L-03ATMA1" ISSI, Интегрированные Силиконовые Решения Инк IPB80N03S4L-03ATMA1.

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