Infineon Technologies IRF3315STRR

Номер детали
IRF3315STRR
Производитель
Infineon Technologies
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
D2PAK
Технические
Нахождение ЧипаIRF3315STRR.pdf
Описание
MOSFET N-CH 150V 21A D2PAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IRF3315STRR on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IRF3315STRR is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IRF3315STRR. All suppliers must pass our qualification reviews before they can publish their products including IRF3315STRR on Нахождение Чипа; we pay more attention to the channels and quality of IRF3315STRR products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IRF3315STRR price and inventory displayed accurate?

The price and inventory of IRF3315STRR fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IRF3315STRR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF3315STRR we delivered, we will accept the replacement or return of the IRF3315STRR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF3315STRR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF3315STRR pin diagram, IRF3315STRR datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение IRL1404PBF-INF IRF3808PBF IRF3415STRR IRF3515STRL IRF3515STRR
Номер детали IRL1404PBF-INF IRF3808PBF IRF3415STRR IRF3515STRL IRF3515STRR
Производитель Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Series HEXFET® HEXFET® HEXFET® HEXFET® HEXFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V 150 V 150 V 150 V 150 V
Current-ContinuousDrain(Id)@25°C 21A (Tc) 21A (Tc) 21A (Tc) 21A (Tc) 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 82mOhm @ 12A, 10V 82mOhm @ 12A, 10V 82mOhm @ 12A, 10V 82mOhm @ 12A, 10V 82mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 95 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

IRF3315STRR Актуальная информация

Включенные следующие детали "IRF3315STRR" ISSI, Интегрированные Силиконовые Решения Инк IRF3315STRR.

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