Harris Corporation IRF712R

Номер детали
IRF712R
Производитель
Harris Corporation
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220
Технические
Нахождение ЧипаIRF712R.pdf
Описание
N-CHANNEL POWER MOSFET
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IRF712R on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IRF712R is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IRF712R. All suppliers must pass our qualification reviews before they can publish their products including IRF712R on Нахождение Чипа; we pay more attention to the channels and quality of IRF712R products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IRF712R price and inventory displayed accurate?

The price and inventory of IRF712R fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IRF712R?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF712R we delivered, we will accept the replacement or return of the IRF712R only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF712R.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF712R pin diagram, IRF712R datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение RFP2P08 RFP2N08 RFP2N10 RFD4N06L RFP8P06LE
Номер детали RFP2P08 RFP2N08 RFP2N10 RFD4N06L RFP8P06LE
Производитель Harris Corporation Harris Corporation Harris Corporation Harris Corporation Harris Corporation
Packaging Bulk Bulk Bulk Bulk Bulk
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V 400 V 400 V 400 V 400 V
Current-ContinuousDrain(Id)@25°C 1.7A (Tc) 1.7A (Tc) 1.7A (Tc) 1.7A (Tc) 1.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 5Ohm @1.1A, 10V 5Ohm @1.1A, 10V 5Ohm @1.1A, 10V 5Ohm @1.1A, 10V 5Ohm @1.1A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 135 pF @ 25 V 135 pF @ 25 V 135 pF @ 25 V 135 pF @ 25 V 135 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 36W (Tc) 36W (Tc) 36W (Tc) 36W (Tc) 36W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

IRF712R Актуальная информация

Включенные следующие детали "IRF712R" ISSI, Интегрированные Силиконовые Решения Инк IRF712R.

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