Infineon Technologies IRFSL31N20D

Номер детали
IRFSL31N20D
Производитель
Infineon Technologies
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-262
Технические
Нахождение ЧипаIRFSL31N20D.pdf
Описание
MOSFET N-CH 200V 31A TO262
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IRFSL31N20D on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IRFSL31N20D is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IRFSL31N20D. All suppliers must pass our qualification reviews before they can publish their products including IRFSL31N20D on Нахождение Чипа; we pay more attention to the channels and quality of IRFSL31N20D products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IRFSL31N20D price and inventory displayed accurate?

The price and inventory of IRFSL31N20D fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IRFSL31N20D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFSL31N20D we delivered, we will accept the replacement or return of the IRFSL31N20D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFSL31N20D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRFSL31N20D pin diagram, IRFSL31N20D datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение IRL1404PBF-INF IRF3808PBF IRF3415STRR IRF3515STRL IRF3515STRR
Номер детали IRL1404PBF-INF IRF3808PBF IRF3415STRR IRF3515STRL IRF3515STRR
Производитель Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Packaging Tube Tube Tube Tube Tube
Series HEXFET® HEXFET® HEXFET® HEXFET® HEXFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 200 V 200 V 200 V 200 V
Current-ContinuousDrain(Id)@25°C 31A (Tc) 31A (Tc) 31A (Tc) 31A (Tc) 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 82mOhm @ 18A, 10V 82mOhm @ 18A, 10V 82mOhm @ 18A, 10V 82mOhm @ 18A, 10V 82mOhm @ 18A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 2370 pF @ 25 V 2370 pF @ 25 V 2370 pF @ 25 V 2370 pF @ 25 V 2370 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 3.1W (Ta), 200W (Tc) 3.1W (Ta), 200W (Tc) 3.1W (Ta), 200W (Tc) 3.1W (Ta), 200W (Tc) 3.1W (Ta), 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

IRFSL31N20D Актуальная информация

Включенные следующие детали "IRFSL31N20D" ISSI, Интегрированные Силиконовые Решения Инк IRFSL31N20D.

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