Fairchild Semiconductor ISL9N308AP3

Номер детали
ISL9N308AP3
Производитель
Fairchild Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220AB
Технические
Нахождение ЧипаISL9N308AP3.pdf
Описание
N-CHANNEL POWER MOSFET
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order ISL9N308AP3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that ISL9N308AP3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the ISL9N308AP3. All suppliers must pass our qualification reviews before they can publish their products including ISL9N308AP3 on Нахождение Чипа; we pay more attention to the channels and quality of ISL9N308AP3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the ISL9N308AP3 price and inventory displayed accurate?

The price and inventory of ISL9N308AP3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of ISL9N308AP3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the ISL9N308AP3 we delivered, we will accept the replacement or return of the ISL9N308AP3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of ISL9N308AP3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as ISL9N308AP3 pin diagram, ISL9N308AP3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение HUFA76609D3ST_NL ISL9N310AD3ST_NL ISL9N306AD3ST ISL9N310AP3 ISL9N310AD3
Номер детали HUFA76609D3ST_NL ISL9N310AD3ST_NL ISL9N306AD3ST ISL9N310AP3 ISL9N310AD3
Производитель Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Packaging Bulk Bulk Bulk Bulk Bulk
Series UltraFET® UltraFET® UltraFET® UltraFET® UltraFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 8Ohm @ 75A, 10V 8Ohm @ 75A, 10V 8Ohm @ 75A, 10V 8Ohm @ 75A, 10V 8Ohm @ 75A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 68 nC @ 10 V 68 nC @ 10 V 68 nC @ 10 V 68 nC @ 10 V 68 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2600 pF @ 15 V 2600 pF @ 15 V 2600 pF @ 15 V 2600 pF @ 15 V 2600 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 100W (Tc) 100W (Tc) 100W (Tc) 100W (Tc) 100W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

ISL9N308AP3 Актуальная информация

Включенные следующие детали "ISL9N308AP3" ISSI, Интегрированные Силиконовые Решения Инк ISL9N308AP3.

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