onsemi NVD360N65S3T4G

Номер детали
NVD360N65S3T4G
Производитель
onsemi
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
DPAK
Технические
Нахождение ЧипаNVD360N65S3T4G.pdf
Описание
SF3 EASY AUTO 360MOHM DPAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order NVD360N65S3T4G on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that NVD360N65S3T4G is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the NVD360N65S3T4G. All suppliers must pass our qualification reviews before they can publish their products including NVD360N65S3T4G on Нахождение Чипа; we pay more attention to the channels and quality of NVD360N65S3T4G products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the NVD360N65S3T4G price and inventory displayed accurate?

The price and inventory of NVD360N65S3T4G fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of NVD360N65S3T4G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NVD360N65S3T4G we delivered, we will accept the replacement or return of the NVD360N65S3T4G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVD360N65S3T4G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as NVD360N65S3T4G pin diagram, NVD360N65S3T4G datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение FCPF360N65S3R0L-F154 FCPF250N65S3R0L-F154 NTPF450N80S3Z NTPF250N65S3H FCHD040N65S3-F155
Номер детали FCPF360N65S3R0L-F154 FCPF250N65S3R0L-F154 NTPF450N80S3Z NTPF250N65S3H FCHD040N65S3-F155
Производитель onsemi onsemi onsemi onsemi onsemi
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Series SuperFET® III SuperFET® III SuperFET® III SuperFET® III SuperFET® III
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V 650 V 650 V 650 V 650 V
Current-ContinuousDrain(Id)@25°C 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 360mOhm @ 5A, 10V 360mOhm @ 5A, 10V 360mOhm @ 5A, 10V 360mOhm @ 5A, 10V 360mOhm @ 5A, 10V
Vgs(th)(Max)@Id 4.5V @ 200µA 4.5V @ 200µA 4.5V @ 200µA 4.5V @ 200µA 4.5V @ 200µA
GateCharge(Qg)(Max)@Vgs 16.8 nC @ 10 V 16.8 nC @ 10 V 16.8 nC @ 10 V 16.8 nC @ 10 V 16.8 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 756 pF @ 400 V 756 pF @ 400 V 756 pF @ 400 V 756 pF @ 400 V 756 pF @ 400 V
FETFeature - - - - -
PowerDissipation(Max) 83W (Tc) 83W (Tc) 83W (Tc) 83W (Tc) 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

NVD360N65S3T4G Актуальная информация

Включенные следующие детали "NVD360N65S3T4G" ISSI, Интегрированные Силиконовые Решения Инк NVD360N65S3T4G.

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