NXP USA Inc. PHB110NQ08T,118

Номер детали
PHB110NQ08T,118
Производитель
NXP USA Inc.
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
D2PAK
Технические
Нахождение ЧипаPHB110NQ08T,118.pdf
Описание
MOSFET N-CH 75V 75A D2PAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order PHB110NQ08T,118 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that PHB110NQ08T,118 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the PHB110NQ08T,118. All suppliers must pass our qualification reviews before they can publish their products including PHB110NQ08T,118 on Нахождение Чипа; we pay more attention to the channels and quality of PHB110NQ08T,118 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the PHB110NQ08T,118 price and inventory displayed accurate?

The price and inventory of PHB110NQ08T,118 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of PHB110NQ08T,118?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the PHB110NQ08T,118 we delivered, we will accept the replacement or return of the PHB110NQ08T,118 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of PHB110NQ08T,118.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as PHB110NQ08T,118 pin diagram, PHB110NQ08T,118 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение BUK7535-55A,127 BUK7528-55A,127 BUK7507-30B,127 BUK7516-55A,127 BUK9514-55A,127
Номер детали BUK7535-55A,127 BUK7528-55A,127 BUK7507-30B,127 BUK7516-55A,127 BUK9514-55A,127
Производитель NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Packaging Bulk Bulk Bulk Bulk Bulk
Series TrenchMOS™ TrenchMOS™ TrenchMOS™ TrenchMOS™ TrenchMOS™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V 75 V 75 V 75 V 75 V
Current-ContinuousDrain(Id)@25°C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 9mOhm @ 25A, 10V 9mOhm @ 25A, 10V 9mOhm @ 25A, 10V 9mOhm @ 25A, 10V 9mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 113.1 nC @ 10 V 113.1 nC @ 10 V 113.1 nC @ 10 V 113.1 nC @ 10 V 113.1 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 4860 pF @ 25 V 4860 pF @ 25 V 4860 pF @ 25 V 4860 pF @ 25 V 4860 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 230W (Tc) 230W (Tc) 230W (Tc) 230W (Tc) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

PHB110NQ08T,118 Актуальная информация

Включенные следующие детали "PHB110NQ08T,118" ISSI, Интегрированные Силиконовые Решения Инк PHB110NQ08T,118.

  • Номер детали
  • Производитель
  • Упаковка
  • Описание
На складе:750

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