Nexperia USA Inc. PMPB07R3ENX

Номер детали
PMPB07R3ENX
Производитель
Nexperia USA Inc.
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
DFN2020M-6
Технические
Нахождение ЧипаPMPB07R3ENX.pdf
Описание
PMPB07R3EN/SOT1220-2/DFN2020M-
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order PMPB07R3ENX on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that PMPB07R3ENX is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the PMPB07R3ENX. All suppliers must pass our qualification reviews before they can publish their products including PMPB07R3ENX on Нахождение Чипа; we pay more attention to the channels and quality of PMPB07R3ENX products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the PMPB07R3ENX price and inventory displayed accurate?

The price and inventory of PMPB07R3ENX fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of PMPB07R3ENX?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the PMPB07R3ENX we delivered, we will accept the replacement or return of the PMPB07R3ENX only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of PMPB07R3ENX.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as PMPB07R3ENX pin diagram, PMPB07R3ENX datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение PMF170XP,115 PMV28ENER PMT560ENEAX NXV100XPR PMXB40UNEZ
Номер детали PMF170XP,115 PMV28ENER PMT560ENEAX NXV100XPR PMXB40UNEZ
Производитель Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 12A (Ta) 12A (Ta) 12A (Ta) 12A (Ta) 12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 8.6mOhm @ 12A, 10V 8.6mOhm @ 12A, 10V 8.6mOhm @ 12A, 10V 8.6mOhm @ 12A, 10V 8.6mOhm @ 12A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 914 pF @ 15 V 914 pF @ 15 V 914 pF @ 15 V 914 pF @ 15 V 914 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 1.9W (Ta), 12.5W (Tc) 1.9W (Ta), 12.5W (Tc) 1.9W (Ta), 12.5W (Tc) 1.9W (Ta), 12.5W (Tc) 1.9W (Ta), 12.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

PMPB07R3ENX Актуальная информация

Включенные следующие детали "PMPB07R3ENX" ISSI, Интегрированные Силиконовые Решения Инк PMPB07R3ENX.

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