Rohm Semiconductor RP1E090RPTR

Номер детали
RP1E090RPTR
Производитель
Rohm Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
MPT6
Технические
Нахождение ЧипаRP1E090RPTR.pdf
Описание
MOSFET P-CH 30V 9A MPT6
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order RP1E090RPTR on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that RP1E090RPTR is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the RP1E090RPTR. All suppliers must pass our qualification reviews before they can publish their products including RP1E090RPTR on Нахождение Чипа; we pay more attention to the channels and quality of RP1E090RPTR products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the RP1E090RPTR price and inventory displayed accurate?

The price and inventory of RP1E090RPTR fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of RP1E090RPTR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RP1E090RPTR we delivered, we will accept the replacement or return of the RP1E090RPTR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RP1E090RPTR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as RP1E090RPTR pin diagram, RP1E090RPTR datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Номер детали R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Производитель Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 9A (Ta) 9A (Ta) 9A (Ta) 9A (Ta) 9A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 10V 4V, 10V 4V, 10V 4V, 10V 4V, 10V
RdsOn(Max)@IdVgs 16.9mOhm @ 9A, 10V 16.9mOhm @ 9A, 10V 16.9mOhm @ 9A, 10V 16.9mOhm @ 9A, 10V 16.9mOhm @ 9A, 10V
Vgs(th)(Max)@Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 30 nC @ 5 V 30 nC @ 5 V 30 nC @ 5 V 30 nC @ 5 V 30 nC @ 5 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 3000 pF @ 10 V 3000 pF @ 10 V 3000 pF @ 10 V 3000 pF @ 10 V 3000 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

RP1E090RPTR Актуальная информация

Включенные следующие детали "RP1E090RPTR" ISSI, Интегрированные Силиконовые Решения Инк RP1E090RPTR.

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  • Упаковка
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