Rohm Semiconductor RW1A030APT2CR

Номер детали
RW1A030APT2CR
Производитель
Rohm Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
6-WEMT
Технические
Нахождение ЧипаRW1A030APT2CR.pdf
Описание
MOSFET P-CH 12V 3A 6WEMT
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order RW1A030APT2CR on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that RW1A030APT2CR is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the RW1A030APT2CR. All suppliers must pass our qualification reviews before they can publish their products including RW1A030APT2CR on Нахождение Чипа; we pay more attention to the channels and quality of RW1A030APT2CR products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the RW1A030APT2CR price and inventory displayed accurate?

The price and inventory of RW1A030APT2CR fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of RW1A030APT2CR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RW1A030APT2CR we delivered, we will accept the replacement or return of the RW1A030APT2CR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RW1A030APT2CR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as RW1A030APT2CR pin diagram, RW1A030APT2CR datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Номер детали R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Производитель Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 12 V 12 V 12 V 12 V 12 V
Current-ContinuousDrain(Id)@25°C 3A (Ta) 3A (Ta) 3A (Ta) 3A (Ta) 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
RdsOn(Max)@IdVgs 42mOhm @ 3A, 4.5V 42mOhm @ 3A, 4.5V 42mOhm @ 3A, 4.5V 42mOhm @ 3A, 4.5V 42mOhm @ 3A, 4.5V
Vgs(th)(Max)@Id 1V @ 1mA 1V @ 1mA 1V @ 1mA 1V @ 1mA 1V @ 1mA
GateCharge(Qg)(Max)@Vgs 22 nC @ 4.5 V 22 nC @ 4.5 V 22 nC @ 4.5 V 22 nC @ 4.5 V 22 nC @ 4.5 V
Vgs(Max) -8V -8V -8V -8V -8V
InputCapacitance(Ciss)(Max)@Vds 2700 pF @ 6 V 2700 pF @ 6 V 2700 pF @ 6 V 2700 pF @ 6 V 2700 pF @ 6 V
FETFeature - - - - -
PowerDissipation(Max) 700mW (Ta) 700mW (Ta) 700mW (Ta) 700mW (Ta) 700mW (Ta)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

RW1A030APT2CR Актуальная информация

Включенные следующие детали "RW1A030APT2CR" ISSI, Интегрированные Силиконовые Решения Инк RW1A030APT2CR.

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