Vishay Siliconix SI3900DV-T1-E3

Номер детали
SI3900DV-T1-E3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - массивы
Упаковка
SOT-23-6 Thin, TSOT-23-6
Технические
Нахождение ЧипаSI3900DV-T1-E3.pdf
Описание
MOSFET 2N-CH 20V 2A 6-TSOP
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SI3900DV-T1-E3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SI3900DV-T1-E3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SI3900DV-T1-E3. All suppliers must pass our qualification reviews before they can publish their products including SI3900DV-T1-E3 on Нахождение Чипа; we pay more attention to the channels and quality of SI3900DV-T1-E3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SI3900DV-T1-E3 price and inventory displayed accurate?

The price and inventory of SI3900DV-T1-E3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SI3900DV-T1-E3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI3900DV-T1-E3 we delivered, we will accept the replacement or return of the SI3900DV-T1-E3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI3900DV-T1-E3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SI3900DV-T1-E3 pin diagram, SI3900DV-T1-E3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SI3900DV-T1-E3 SI4936ADY-T1-E3 SI1024X-T1-GE3 SIZ988DT-T1-GE3 SI6954ADQ-T1-E3
Номер детали SI3900DV-T1-E3 SI4936ADY-T1-E3 SI1024X-T1-GE3 SIZ988DT-T1-GE3 SI6954ADQ-T1-E3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET® TrenchFET®
ProductStatus Active Active Active Active Active
FETType 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FETFeature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
DraintoSourceVoltage(Vdss) 20V 20V 20V 20V 20V
Current-ContinuousDrain(Id)@25°C 2A 2A 2A 2A 2A
RdsOn(Max)@IdVgs 125mOhm @ 2.4A, 4.5V 125mOhm @ 2.4A, 4.5V 125mOhm @ 2.4A, 4.5V 125mOhm @ 2.4A, 4.5V 125mOhm @ 2.4A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 4nC @ 4.5V 4nC @ 4.5V 4nC @ 4.5V 4nC @ 4.5V 4nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds - - - - -
Power-Max 830mW 830mW 830mW 830mW 830mW
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SI3900DV-T1-E3 Актуальная информация

Включенные следующие детали "SI3900DV-T1-E3" ISSI, Интегрированные Силиконовые Решения Инк SI3900DV-T1-E3.

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