Vishay Siliconix SI7892BDP-T1-GE3

Номер детали
SI7892BDP-T1-GE3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PowerPAK® SO-8
Технические
Нахождение ЧипаSI7892BDP-T1-GE3.pdf
Описание
MOSFET N-CH 30V 15A PPAK SO-8
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SI7892BDP-T1-GE3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SI7892BDP-T1-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SI7892BDP-T1-GE3. All suppliers must pass our qualification reviews before they can publish their products including SI7892BDP-T1-GE3 on Нахождение Чипа; we pay more attention to the channels and quality of SI7892BDP-T1-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SI7892BDP-T1-GE3 price and inventory displayed accurate?

The price and inventory of SI7892BDP-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SI7892BDP-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI7892BDP-T1-GE3 we delivered, we will accept the replacement or return of the SI7892BDP-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI7892BDP-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SI7892BDP-T1-GE3 pin diagram, SI7892BDP-T1-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SI8447DB-T2-E1 SI8465DB-T2-E1 SI8824EDB-T2-E1 SI2303CDS-T1-BE3 SI1032X-T1-GE3
Номер детали SI8447DB-T2-E1 SI8465DB-T2-E1 SI8824EDB-T2-E1 SI2303CDS-T1-BE3 SI1032X-T1-GE3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET® TrenchFET®
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 15A (Ta) 15A (Ta) 15A (Ta) 15A (Ta) 15A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 25A, 10V 4.2mOhm @ 25A, 10V 4.2mOhm @ 25A, 10V 4.2mOhm @ 25A, 10V 4.2mOhm @ 25A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 4.5 V 40 nC @ 4.5 V 40 nC @ 4.5 V 40 nC @ 4.5 V 40 nC @ 4.5 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 3775 pF @ 15 V 3775 pF @ 15 V 3775 pF @ 15 V 3775 pF @ 15 V 3775 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SI7892BDP-T1-GE3 Актуальная информация

Включенные следующие детали "SI7892BDP-T1-GE3" ISSI, Интегрированные Силиконовые Решения Инк SI7892BDP-T1-GE3.

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