Vishay Siliconix SI7956DP-T1-E3

Номер детали
SI7956DP-T1-E3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - массивы
Упаковка
PowerPAK® SO-8 Dual
Технические
Нахождение ЧипаSI7956DP-T1-E3.pdf
Описание
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SI7956DP-T1-E3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SI7956DP-T1-E3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SI7956DP-T1-E3. All suppliers must pass our qualification reviews before they can publish their products including SI7956DP-T1-E3 on Нахождение Чипа; we pay more attention to the channels and quality of SI7956DP-T1-E3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SI7956DP-T1-E3 price and inventory displayed accurate?

The price and inventory of SI7956DP-T1-E3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SI7956DP-T1-E3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI7956DP-T1-E3 we delivered, we will accept the replacement or return of the SI7956DP-T1-E3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI7956DP-T1-E3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SI7956DP-T1-E3 pin diagram, SI7956DP-T1-E3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SI3900DV-T1-E3 SI4936ADY-T1-E3 SI1024X-T1-GE3 SIZ988DT-T1-GE3 SI6954ADQ-T1-E3
Номер детали SI3900DV-T1-E3 SI4936ADY-T1-E3 SI1024X-T1-GE3 SIZ988DT-T1-GE3 SI6954ADQ-T1-E3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET® TrenchFET®
ProductStatus Active Active Active Active Active
FETType 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FETFeature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
DraintoSourceVoltage(Vdss) 150V 150V 150V 150V 150V
Current-ContinuousDrain(Id)@25°C 2.6A 2.6A 2.6A 2.6A 2.6A
RdsOn(Max)@IdVgs 105mOhm @ 4.1A, 10V 105mOhm @ 4.1A, 10V 105mOhm @ 4.1A, 10V 105mOhm @ 4.1A, 10V 105mOhm @ 4.1A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 26nC @ 10V 26nC @ 10V 26nC @ 10V 26nC @ 10V 26nC @ 10V
InputCapacitance(Ciss)(Max)@Vds - - - - -
Power-Max 1.4W 1.4W 1.4W 1.4W 1.4W
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SI7956DP-T1-E3 Актуальная информация

Включенные следующие детали "SI7956DP-T1-E3" ISSI, Интегрированные Силиконовые Решения Инк SI7956DP-T1-E3.

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