Vishay Siliconix SIHP186N60EF-GE3

Номер детали
SIHP186N60EF-GE3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220AB
Технические
Нахождение ЧипаSIHP186N60EF-GE3.pdf
Описание
MOSFET N-CH 600V 18A TO220AB
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SIHP186N60EF-GE3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SIHP186N60EF-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SIHP186N60EF-GE3. All suppliers must pass our qualification reviews before they can publish their products including SIHP186N60EF-GE3 on Нахождение Чипа; we pay more attention to the channels and quality of SIHP186N60EF-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SIHP186N60EF-GE3 price and inventory displayed accurate?

The price and inventory of SIHP186N60EF-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SIHP186N60EF-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIHP186N60EF-GE3 we delivered, we will accept the replacement or return of the SIHP186N60EF-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIHP186N60EF-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SIHP186N60EF-GE3 pin diagram, SIHP186N60EF-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SIHB35N60EF-GE3 SIHH240N60E-T1-GE3 SIHA22N60EF-GE3 SIHG105N60EF-GE3 SIHB125N60EF-GE3
Номер детали SIHB35N60EF-GE3 SIHH240N60E-T1-GE3 SIHA22N60EF-GE3 SIHG105N60EF-GE3 SIHB125N60EF-GE3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tube Tube Tube Tube Tube
Series EF EF EF EF EF
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V 600 V 600 V 600 V
Current-ContinuousDrain(Id)@25°C 18A (Tc) 18A (Tc) 18A (Tc) 18A (Tc) 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 193mOhm @ 9.5A, 10V 193mOhm @ 9.5A, 10V 193mOhm @ 9.5A, 10V 193mOhm @ 9.5A, 10V 193mOhm @ 9.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 1081 pF @ 100 V 1081 pF @ 100 V 1081 pF @ 100 V 1081 pF @ 100 V 1081 pF @ 100 V
FETFeature - - - - -
PowerDissipation(Max) 156W (Tc) 156W (Tc) 156W (Tc) 156W (Tc) 156W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

SIHP186N60EF-GE3 Актуальная информация

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