Infineon Technologies SPA08N50C3

Номер детали
SPA08N50C3
Производитель
Infineon Technologies
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PG-TO220-3-111
Технические
Нахождение ЧипаSPA08N50C3.pdf
Описание
N-CHANNEL POWER MOSFET
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SPA08N50C3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SPA08N50C3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SPA08N50C3. All suppliers must pass our qualification reviews before they can publish their products including SPA08N50C3 on Нахождение Чипа; we pay more attention to the channels and quality of SPA08N50C3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SPA08N50C3 price and inventory displayed accurate?

The price and inventory of SPA08N50C3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SPA08N50C3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SPA08N50C3 we delivered, we will accept the replacement or return of the SPA08N50C3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SPA08N50C3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SPA08N50C3 pin diagram, SPA08N50C3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SPW35N60C3FKSA1 IPP065N03LG SPD50N03S2L SP000629364 SPB03N60C3
Номер детали SPW35N60C3FKSA1 IPP065N03LG SPD50N03S2L SP000629364 SPB03N60C3
Производитель Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Packaging Bulk Bulk Bulk Bulk Bulk
Series CoolMOS™ CoolMOS™ CoolMOS™ CoolMOS™ CoolMOS™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 560 V 560 V 560 V 560 V 560 V
Current-ContinuousDrain(Id)@25°C 7.6A (Tc) 7.6A (Tc) 7.6A (Tc) 7.6A (Tc) 7.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V
Vgs(th)(Max)@Id 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 350µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 750 pF @ 25 V 750 pF @ 25 V 750 pF @ 25 V 750 pF @ 25 V 750 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 32W (Tc) 32W (Tc) 32W (Tc) 32W (Tc) 32W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

SPA08N50C3 Актуальная информация

Включенные следующие детали "SPA08N50C3" ISSI, Интегрированные Силиконовые Решения Инк SPA08N50C3.

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