Диоды - выпрямители - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-40HFR140

VS-40HFR140

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,816 -

RFQ

VS-40HFR140

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 40A -65°C ~ 160°C 1.5 V @ 125 A
VS-12EWH06FNTRR-M3

VS-12EWH06FNTRR-M3

DIODE GEN PURPOSE 600V 12A DPAK

Vishay General Semiconductor - Diodes Division
3,026 -

RFQ

VS-12EWH06FNTRR-M3

Технические

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 26 ns 10 µA @ 600 V 600 V 12A -65°C ~ 175°C 2.5 V @ 12 A
VS-80PF160W

VS-80PF160W

DIODE GEN PURP 1.6KV 80A DO203AB

Vishay General Semiconductor - Diodes Division
3,449 -

RFQ

VS-80PF160W

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 1600 V 80A -55°C ~ 150°C 1.46 V @ 220 A
VS-80PF40W

VS-80PF40W

DIODE GEN PURP 400V 80A DO203AB

Vishay General Semiconductor - Diodes Division
3,359 -

RFQ

VS-80PF40W

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 400 V 80A -55°C ~ 180°C 1.4 V @ 220 A
VS-10ETS12FP-M3

VS-10ETS12FP-M3

DIODE GEN PURP 1.2KV 10A TO220FP

Vishay General Semiconductor - Diodes Division
3,289 -

RFQ

VS-10ETS12FP-M3

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 50 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.1 V @ 10 A
VS-HFA16TB120-M3

VS-HFA16TB120-M3

DIODE FRED 1.2KV 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,307 -

RFQ

VS-HFA16TB120-M3

Технические

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 135 ns 20 µA @ 1200 V 1200 V 16A (DC) -55°C ~ 150°C 3.93 V @ 32 A
VS-20ETS16THM3

VS-20ETS16THM3

RECTIFIER DIODE 20A 1600V TO-220

Vishay General Semiconductor - Diodes Division
2,232 -

RFQ

VS-20ETS16THM3

Технические

Tube Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1600 V 1600 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VI20150SG-M3/4W

VI20150SG-M3/4W

DIODE SCHOTTKY 20A 150V TO-262AA

Vishay General Semiconductor - Diodes Division
2,452 -

RFQ

VI20150SG-M3/4W

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.6 V @ 20 A
VS-20ETS08-M3

VS-20ETS08-M3

DIODE GEN PURP 800V 20A TO220AC

Vishay General Semiconductor - Diodes Division
3,491 -

RFQ

VS-20ETS08-M3

Технические

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.1 V @ 20 A
MBRF10100-M3/4W

MBRF10100-M3/4W

DIODE SCHOTTKY 100V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,547 -

RFQ

MBRF10100-M3/4W

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -65°C ~ 150°C 800 mV @ 10 A
VS-20ETS12-M3

VS-20ETS12-M3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division
2,433 -

RFQ

VS-20ETS12-M3

Технические

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1 V @ 10 A
VS-80PFR40W

VS-80PFR40W

DIODE GEN PURP 400V 80A DO203AB

Vishay General Semiconductor - Diodes Division
3,055 -

RFQ

VS-80PFR40W

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 400 V 80A -55°C ~ 180°C 1.4 V @ 220 A
MBRF1090-M3/4W

MBRF1090-M3/4W

DIODE SCHOTTKY 90V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
2,618 -

RFQ

MBRF1090-M3/4W

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -65°C ~ 150°C 800 mV @ 10 A
VS-8EWS08S-M3

VS-8EWS08S-M3

DIODE GEN PURP 800V 8A TO252AA

Vishay General Semiconductor - Diodes Division
3,818 -

RFQ

VS-8EWS08S-M3

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.1 V @ 8 A
VS-8EWS12S-M3

VS-8EWS12S-M3

DIODE GEN PURP 1.2KV 8A TO252AA

Vishay General Semiconductor - Diodes Division
2,080 -

RFQ

VS-8EWS12S-M3

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1200 V 1200 V 8A -55°C ~ 150°C 1.1 V @ 8 A
VI20120SG-M3/4W

VI20120SG-M3/4W

DIODE SCHOTTKY 20A 120V TO-262AA

Vishay General Semiconductor - Diodes Division
3,225 -

RFQ

VI20120SG-M3/4W

Технические

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 250 µA @ 120 V 120 V 20A -40°C ~ 150°C 1.33 V @ 20 A
VS-50PF120W

VS-50PF120W

DIODE GEN PURP 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
3,774 -

RFQ

VS-50PF120W

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 1200 V 50A -55°C ~ 180°C 1.4 V @ 125 A
SE20DBHM3/I

SE20DBHM3/I

DIODE GEN PURP 100V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division
2,231 -

RFQ

SE20DBHM3/I

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 100 V 100 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
VS-50PFR120W

VS-50PFR120W

DIODE GEN PURP 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
2,327 -

RFQ

VS-50PFR120W

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 1200 V 50A -55°C ~ 180°C 1.4 V @ 125 A
SE20DDHM3/I

SE20DDHM3/I

DIODE GEN PURP 200V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division
3,527 -

RFQ

SE20DDHM3/I

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 200 V 200 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
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