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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-41HF100DIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
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VS-80PFR80WDIODE GEN PURP 800V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,998 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 800 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
VS-15ETX06S-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,270 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
RGP30A-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,976 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
RGP30B-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,408 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
VS-95PF160WDIODE GEN PURP 1.6KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,792 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1600 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
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RGP30D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,609 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
RGP25J-E3/54DIODE GEN PURP 600V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,407 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
VS-40EPS12-M3DIODE GEN PURP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,177 | - |
RFQ |
Технические |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 40A | -40°C ~ 150°C | 1 V @ 20 A | |
|
|
VS-95PF80DIODE GEN PURP 800V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,602 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 800 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-90APF12L-M3RECTIFIER DIODE 90A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,380 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 90A | -40°C ~ 150°C | 1.38 V @ 90 A | |
|
|
VS-MBRB745-M3DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,303 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
VS-95PFR80DIODE GEN PURP 800V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,941 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-50PFR140WDIODE GEN PURP 1.4KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
2,993 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 1400 V | 50A | -55°C ~ 160°C | 1.5 V @ 125 A | |
|
VI10150S-E3/4WDIODE SCHOTTKY 150V 10A TO262AA Vishay General Semiconductor - Diodes Division |
2,293 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
|
VS-6FLR100S05DIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,259 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 1000 V | 1000 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
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VS-12TQ035SHM3DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,914 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
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VS-12TQ040SHM3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,988 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
VS-65EPS16LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
2,891 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 65A | -40°C ~ 150°C | 1.17 V @ 65 A |
|
VS-30EPH06-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,753 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 31 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
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