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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S4PMHM3_A/HDIODE GEN PURP 1KV 4A TO277A Vishay General Semiconductor - Diodes Division |
2,433 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
SE80PWD-M3/IDIODE GEN PURP 200V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,100 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 200 V | 200 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
BYT51K-TRDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS3P6LHM3_A/IDIODE SCHOTTKY 60V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,792 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 50 V | 60 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
|
SE80PWG-M3/IDIODE GEN PURP 400V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,418 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 400 V | 400 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
|
BYT53C-TRDIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,714 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
ES2A-M3/5BTDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,249 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
S5GHM3/57TDIODE GP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,927 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
SE80PWJ-M3/IDIODE GEN PURP 600V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,889 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 600 V | 600 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
|
BYT54J-TRDIODE AVALANCHE 600V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,662 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
ES2B-M3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
BYV15-TRDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
ES2C-M3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,282 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
BYT51A-TAPDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYW35-TRDIODE AVALANCHE 500V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,489 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
ES2D-M3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,540 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
BYT51B-TAPDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,128 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYX86TRDIODE AVALANCHE 1KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
1N5061TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,880 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
|
ES2A-M3/52TDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
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