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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS5P9HM3_A/IDIODE SCHOTTKY 90V 5A TO277A Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 15 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 880 mV @ 5 A |
|
1N6481HE3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,755 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V8P15-M3/HDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,606 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
|
SSC53L-M3/9ATDIODE SCHOTTKY 5A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,470 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
|
1N6482HE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V8P15-M3/IDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,833 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
|
|
SSC53L-M3/57TDIODE SCHOTTKY 5A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
|
1N6483HE3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,847 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V8PM10-M3/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 60 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 750 mV @ 8 A |
|
|
1N6484HE3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V8PM10-M3/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,227 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 60 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 750 mV @ 8 A |
|
|
RS3A-E3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,422 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
RS3B-E3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
VS-2EFH02-M3/IDIODE GEN PURP 200V 2A DO219AB Vishay General Semiconductor - Diodes Division |
3,189 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
|
RS3D-E3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,680 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
V8PA10HM3/IDIODE SCHOTTKY 100V 8A DO221BC Vishay General Semiconductor - Diodes Division |
2,439 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 4V, 1MHz | - | 800 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 760 mV @ 8 A |
|
|
RS3G-E3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,035 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
V10PM15-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,860 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 680pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 175°C | 1.08 V @ 10 A |
|
|
V8PA12HM3/IDIODE SCHOTTKY 120V 8A DO221BC Vishay General Semiconductor - Diodes Division |
3,573 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 700pF @ 4V, 1MHz | - | 600 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 870 mV @ 8 A |
|
|
RS3JHE3_A/IDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
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