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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MURS360HE3_A/HDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,176 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 3 V | 600 V | 3A | -65°C ~ 175°C | 1.28 V @ 4 A |
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ESH1PBHM3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,434 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
1N4003-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,617 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
31GF6-M3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,934 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.6 V @ 3 A | |
|
|
ESH1PB-M3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
1N4007-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,242 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
AS4PK-M3/87ADIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,870 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
ESH1PCHM3/85ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
1N4005-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,937 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
AS4PM-M3/87ADIODE AVALANCHE 1KV 2.4A TO277 Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
ESH1PC-M3/85ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,748 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
VS-6ESH01-M3/87ADIODE GEN PURP 100V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 2 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 940 mV @ 6 A |
|
|
AU2PD-M3/87ADIODE AVALANCHE 200V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,948 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
|
ESH1PDHM3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,783 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
MURS240-E3/5BTDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,072 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.45 V @ 2 A | |
|
|
VS-6ESH02-M3/87ADIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,825 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 2 µA @ 200 V | 200 V | 6A | -65°C ~ 175°C | 940 mV @ 6 A |
|
|
AU2PJ-M3/87ADIODE AVALANCHE 600V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
|
ESH1PD-M3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,825 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
AS4PK-M3/86ADIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,853 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
ESH2PD-M3/85ADIODE GEN PURP 200V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,998 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
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