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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AU2PD-M3/86ADIODE AVALANCHE 200V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
2,384 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
|
AU2PG-M3/86ADIODE AVALANCHE 400V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,463 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 400 V | 400 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
|
V12P12-M3/87ADIODE SCHOTTKY 120V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 12A | -40°C ~ 150°C | 800 mV @ 12 A |
|
31GF6-M3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.6 V @ 3 A | |
|
|
AU2PG-M3/87ADIODE AVALANCHE 400V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
2,531 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 400 V | 400 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
SSA33LHE3_A/IDIODE SCHOTTKY 30V 3A DO214AC Vishay General Semiconductor - Diodes Division |
3,889 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 450 mV @ 3 A |
|
|
VS-3EMH06-M3/5ATDIODE GEN PURP 600V 3A DO214AC Vishay General Semiconductor - Diodes Division |
3,982 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 3 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A |
|
|
V12PM12HM3_A/HDIODE SCHOTTKY 120V 4.1A TO277A Vishay General Semiconductor - Diodes Division |
3,724 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 4.1A | -40°C ~ 150°C | 830 mV @ 12 A |
|
|
B330LA-M3/5ATDIODE SCHOTTKY 30V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,048 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 500 mV @ 3 A | |
|
|
V12PM12HM3_A/IDIODE SCHOTTKY 120V 4.1A TO277A Vishay General Semiconductor - Diodes Division |
3,221 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 4.1A | -40°C ~ 150°C | 830 mV @ 12 A |
|
|
AU3PD-M3/87ADIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
2,785 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AU3PG-M3/87ADIODE AVALANCHE 400V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
2,984 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 400 V | 400 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
SB250-E3/73DIODE SCHOTTKY 2A 50V DO-41 Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 50 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
|
|
AU3PJ-M3/86ADIODE AVALANCHE 600V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,151 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
MURS140HE3_A/HDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,961 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
ESH1BHE3_A/HDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
AU3PD-M3/86ADIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AU3PG-M3/86ADIODE AVALANCHE 400V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
2,674 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 400 V | 400 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AU3PJ-M3/87ADIODE AVALANCHE 600V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,661 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
VT760-E3/4WDIODE SCHOTTKY 7.5A 60V TO-220AC Vishay General Semiconductor - Diodes Division |
2,428 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A |
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