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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBYV27-150-E3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
GP10M-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,831 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SBYV27-50-E3/73DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,451 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
V15P45HM3_A/HDIODE SCHOTTKY 45V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,304 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 15A (DC) | -40°C ~ 150°C | 580 mV @ 15 A |
|
S5A-E3/9ATDIODE GEN PURP 50V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,890 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2A-E3/73DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,048 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
V12P45HM3_A/IDIODE SCHOTTKY 45V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,568 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 45 V | 45 V | 12A | -40°C ~ 150°C | 580 mV @ 12 A |
|
|
S5B-E3/9ATDIODE GEN PURP 100V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2B-E3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
V12P6HM3_A/HDIODE SCHOTTKY 60V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,974 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.9 mA @ 60 V | 60 V | 12A | -40°C ~ 150°C | 610 mV @ 12 A |
|
|
S5G-E3/9ATDIODE GEN PURP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,892 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2C-E3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,894 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
V12P6HM3_A/IDIODE SCHOTTKY 60V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.9 mA @ 60 V | 60 V | 12A | -40°C ~ 150°C | 610 mV @ 12 A |
|
|
S5J-E3/9ATDIODE GEN PURP 600V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
RGL34B-E3/83DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,783 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
|
V12P8HM3_A/HDIODE SCHOTTKY 80V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 80 V | 80 V | 12A | -40°C ~ 150°C | 660 mV @ 12 A |
|
|
S5K-E3/9ATDIODE GEN PURP 800V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,519 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
RGL34D-E3/83DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
|
V12P8HM3_A/IDIODE SCHOTTKY 80V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,257 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 80 V | 80 V | 12A | -40°C ~ 150°C | 660 mV @ 12 A |
|
RGF1KHE3_B/IDIODE FAST SW 800V 1A DO-214BA Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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