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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGL34B-E3/98DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,578 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
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ESH2PBHM3/84ADIODE GEN PURP 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,116 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
V15P6HM3_A/IDIODE SCHOTTKY 60V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,417 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.6 mA @ 60 V | 60 V | 15A | -40°C ~ 150°C | 620 mV @ 15 A |
|
GI1-1200GP-E3/54DIODE GEN PURP 1.2KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1200 V | 1200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
GP02-30-E3/73DIODE GEN PURP 3KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,370 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 3000 V | 3000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
|
V15P8HM3_A/HDIODE SCHOTTKY 80V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,185 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 80 V | 80 V | 15A | -40°C ~ 150°C | 660 mV @ 15 A |
|
|
GI1-1400GP-E3/54DIODE GEN PURP 1.4KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,701 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1400 V | 1400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SS12P2L-M3/87ADIODE SCHOTTKY 20V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,062 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 12A | -55°C ~ 150°C | 560 mV @ 12 A |
|
BY203-12STAPDIODE AVALANCH 1.2KV 250MA SOD57 Vishay General Semiconductor - Diodes Division |
3,589 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 2 µA @ 700 V | 1200 V | 250mA (DC) | -55°C ~ 150°C | 2.4 V @ 200 mA | |
|
|
SS12P3L-M3/87ADIODE SCHOTTKY 30V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,092 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 12A | -55°C ~ 150°C | 560 mV @ 12 A |
|
SE100PWBHM3/IDIODE GEN PURP 100V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,966 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
|
|
EGF1B-1HE3_B/HDIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,296 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
RGF1M-7000HE3_B/IDIODE FAST SW 1200V 1A DO-214BA Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
EGF1B-1HE3_B/IDIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,534 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGF1D-2HE3_B/HDIODE GEN PURP 200V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,328 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
SS12P2LHM3_A/HDIODE SCHOTTKY 20V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,728 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 4V, 1MHz | - | 1000 µA @ 20 V | 20 V | 12A | -55°C ~ 150°C | 560 mV @ 12 A |
|
|
BYT51K-TAPDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SE100PWDHM3/IDIODE GEN PURP 200V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,837 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 200 V | 200 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
|
|
SS12P2LHM3_A/IDIODE SCHOTTKY 20V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,345 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 4V, 1MHz | - | 1000 µA @ 20 V | 20 V | 12A | -55°C ~ 150°C | 560 mV @ 12 A |
|
|
BYT52J-TAPDIODE AVALANCHE 600V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 600 V | 600 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A |
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