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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS14-M3/61TDIODE SCHOTTKY 1A 40V DO-214AC Vishay General Semiconductor - Diodes Division |
6,811 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 500 mV @ 1 A | |
|
|
VSSA210-M3/5ATDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
9,005 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A | -40°C ~ 150°C | 700 mV @ 2 A |
|
SS5P6-M3/87ADIODE SCHOTTKY 60V 5A TO277A Vishay General Semiconductor - Diodes Division |
6,420 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
|
|
AS4PM-M3/86ADIODE AVALANCHE 1KV 2.4A TO277 Vishay General Semiconductor - Diodes Division |
2,545 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
SS3P4L-M3/86ADIODE SCHOTTKY 40V 3A TO277A Vishay General Semiconductor - Diodes Division |
1,919 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 250 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
VS-4EWH02FNTR-M3DIODE GEN PURP 200V 4A D-PAK Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 3 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 950 mV @ 4 A |
|
|
VS-6EWH06FNTR-M3DIODE GEN PURP 600V 6A DPAK Vishay General Semiconductor - Diodes Division |
2,344 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 50 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 2.1 V @ 6 A |
|
1N4385GP-E3/54DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,099 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
V15PM45-M3/HDIODE SCHOTTKY TMBS 15A 45V SMPC Vishay General Semiconductor - Diodes Division |
819 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3000pF @ 4V, 1MHz | - | 700 µA @ 45 V | 45 V | 15A | -40°C ~ 175°C | 600 mV @ 15 A |
|
|
GP15D-E3/54DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
1,186 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
VS-5ECU06-M3/9ATDIODE GEN PURP 600V 5A SMC Vishay General Semiconductor - Diodes Division |
6,682 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 43 ns | 3 µA @ 600 V | 600 V | 5A | -55°C ~ 175°C | 1.35 V @ 5 A |
|
BYW52-TRDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
20,816 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
V25PL60-M3/86ADIODE SCHOTTKY 60V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
1,857 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 630 mV @ 25 A |
|
|
BY448TAPDIODE AVALANCHE 1.5KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 3 µA @ 1200 V | 1500 V | 2A | 140°C (Max) | 1.6 V @ 3 A | |
|
|
1N5062TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,616 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
|
BYW34-TAPDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,952 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SBYV28-100-E3/54DIODE GEN PURP 100V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
1,482 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
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|
AS1PG-M3/84ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,127 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
MSQ1PJHM3/H1A, 600V, MICROSMP, ESD PROTECTI Vishay General Semiconductor - Diodes Division |
13,737 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A |
|
|
SS3H10-E3/57TDIODE SCHOTTKY 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
1,159 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A |
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