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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AR3PM-M3/87ADIODE AVALANCHE 1KV 1.6A TO277 Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 34pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
UF4002-E3/53DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,609 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
BYV27-600-TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,125 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.35 V @ 3 A | |
|
|
UF4003-E3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,188 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
VIT3080S-E3/4WDIODE SCHOTTKY 30A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
3,625 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A | |
|
VS-30BQ015HM3/9ATDIODE SCHOTTKY 15V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,777 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1120pF @ 5V, 1MHz | - | 4 mA @ 15 V | 15 V | 3A | -55°C ~ 125°C | 350 mV @ 3 A |
|
|
V20PL60-M3/87ADIODE SCHOTTKY 60V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
2,895 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 590 mV @ 20 A |
|
|
ES3A-M3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,026 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
NSB8ATHE3_B/IDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,706 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
SS10PH45-M3/87ADIODE SCHOTTKY 45V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 80 µA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 720 mV @ 10 A |
|
|
V25PL60-M3/87ADIODE SCHOTTKY 60V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
2,318 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 630 mV @ 25 A |
|
|
AR4PK-M3/87ADIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
ES3B-M3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
NSB8BTHE3_B/IDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-6ESH06HM3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.8 V @ 6 A |
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|
BYM13-20HE3/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
AR4PM-M3/87ADIODE AVALANCHE 1KV 1.8A TO277 Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
ES3C-M3/9ATDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,591 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
NSB8DTHE3_B/IDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-6ESU06HM3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,585 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 58 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.3 V @ 6 A |
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