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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT52M-TAPDIODE AVALANCHE 1KV 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
4,098 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
VFT4045BP-M3/4WDIODE SCHOTTKY 45V 40A ITO220AC Vishay General Semiconductor - Diodes Division |
1,090 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 3 mA @ 45 V | 45 V | 40A (DC) | 200°C (Max) | 670 mV @ 40 A |
|
|
BYT52M-TRDIODE AVALANCHE 1KV 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
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|
SGL41-20-E3/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
1,029 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
AR3PD-M3/86ADIODE AVALANCHE 200V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
1,286 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 44pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 1.8A (DC) | -55°C ~ 175°C | 1.6 V @ 3 A |
|
|
V10P6-M3/86ADIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
1,321 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.9 mA @ 60 V | 60 V | 4.3A | -40°C ~ 150°C | 590 mV @ 10 A |
|
VS-8EWF04S-M3DIODE GEN PURP 400V 8A TO252AA Vishay General Semiconductor - Diodes Division |
1,982 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
SE12DJ-M3/IDIODE GEN PURP 600V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
1,145 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 600 V | 600 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
VS-35EPF12LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
232 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 35A | -40°C ~ 150°C | 1.47 V @ 35 A |
|
VS-EPU6006-N3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
276 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 110 ns | 30 µA @ 600 V | 600 V | 60A | -65°C ~ 175°C | 1.5 V @ 60 A |
|
|
V10P45S-M3/87ADIODE SCHOTTKY 45V 4.4A TO277A Vishay General Semiconductor - Diodes Division |
4,495 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 45 V | 45 V | 4.4A | -40°C ~ 150°C | 570 mV @ 10 A | |
|
|
V35PWM45-M3/IDIODE SCHOTTKY 45V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
4,130 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4020pF @ 4V, 1MHz | - | 1.1 mA @ 45 V | 45 V | 35A | -40°C ~ 175°C | 670 mV @ 35 A |
|
|
SE10DB-M3/IDIODE GEN PURP 100V 3A TO263AC Vishay General Semiconductor - Diodes Division |
1,935 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A | |
|
|
BYV27-600-TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
7,037 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.35 V @ 3 A | |
|
VS-25FR40DIODE GEN PURP 400V 25A DO203AA Vishay General Semiconductor - Diodes Division |
255 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
VS-80EBU02DIODE GEN PURP 200V 80A POWIRTAB Vishay General Semiconductor - Diodes Division |
328 | - |
RFQ |
Технические |
Bulk | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 µA @ 200 V | 200 V | 80A | - | 1.13 V @ 80 A |
|
SL22-E3/5BTDIODE SCHOTTKY 20V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,655 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 440 mV @ 2 A | |
|
|
SL22HE3_A/IDIODE SCHOTTKY 20V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,293 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 395 mV @ 1 A |
|
|
AR3PK-M3/86ADIODE AVALANCHE 800V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,948 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 34pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AR3PK-M3/87ADIODE AVALANCHE 800V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,223 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 34pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
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