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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT56A-TRDIODE AVALANCHE 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,030 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
BYW72-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,278 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
MBRB1635-E3/45DIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,301 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
ES2DHE3J_A/HDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,211 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
BYW82-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,722 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
BY228-13TRDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,875 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | 140°C (Max) | 1.5 V @ 5 A | |
|
MBRF1090-E3/4WDIODE SCHOTTKY 90V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
2,151 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
VSSC8L45-M3/57TDIODE SCHOTTKY 45V 3.8A DO214AB Vishay General Semiconductor - Diodes Division |
3,130 | - |
RFQ |
Технические |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1068pF @ 4V, 1MHz | - | 1.6 mA @ 45 V | 45 V | 3.8A (DC) | -40°C ~ 150°C | 430 mV @ 3.5 A |
|
|
BYT56G-TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
BYW72-TRDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
VI30100SG-E3/4WDIODE SCHOTTKY 100V 30A TO262AA Vishay General Semiconductor - Diodes Division |
2,236 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
|
|
VB20100S-M3/8WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,977 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A | ||
|
|
MBRB10H60HE3_B/PDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,401 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A |
|
|
VB20100S-M3/4WDIODE SCHOTTKY 20A 100V TO-263AB Vishay General Semiconductor - Diodes Division |
3,144 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | ||
|
VS-5EWH06FNTRHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
|
VS-5EWH06FNTRLHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,984 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
V20150S-E3/4WDIODE SCHOTTKY 150V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,751 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A |
|
|
V20150S-M3/4WDIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division |
3,394 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
|
VS-5EWH06FNTRRHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
RGP25K-E3/54DIODE GEN PURP 800V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,420 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
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