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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYM13-30HE3/96DIODE SCHOTTKY 30V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,510 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
FES8FT-E3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
AR4PM-M3/86ADIODE AVALANCHE 1KV 1.8A TO277 Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
ES3D-M3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
NSB8GTHE3_B/IDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
BYM13-40HE3/96DIODE SCHOTTKY 40V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,421 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
V30100S-E3/4WDIODE SCHOTTKY 100V 30A TO220AB Vishay General Semiconductor - Diodes Division |
402 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
|
|
AR4PK-M3/86ADIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,623 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
ES3A-M3/57TDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,782 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
NSB8JTHE3_B/IDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,043 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VT760-M3/4WDIODE SCHOTTKY 7.5A 60V TO-220AC Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
|
|
ES3B-M3/57TDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,700 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
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NSB8KTHE3_B/IDIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
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V12P15HM3/HDIODE SCHOTTKY 150V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 150°C | 1.08 V @ 12 A |
|
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ES3C-M3/57TDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
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NSB8MTHE3_B/IDIODE GEN PURP 1KV 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,572 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
CSA2M-E3/IDIODE GPP 2A 1000V DO-214AC SMA Vishay General Semiconductor - Diodes Division |
2,483 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 1000 V | 1000 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
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SE40PB-M3/87ADIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A (DC) | -55°C ~ 175°C | 1.05 V @ 4 A | |
|
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V12P15HM3/IDIODE SCHOTTKY 150V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,400 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 150°C | 1.08 V @ 12 A |
|
|
ES3D-M3/57TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
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