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Диоды - выпрямители - одиночные

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ESH2D M4G DIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation	3,122	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	25pF @ 4V, 1MHz	20 ns	2 µA @ 200 V	200 V	2A	-55°C ~ 175°C	900 mV @ 2 A
SK320BHM4G DIODE SCHOTTKY 200V 3A DO214AA Taiwan Semiconductor Corporation	3,027	-	RFQ	Технические	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
S1GM RSG DIODE GEN PURP 400V 1A MICRO SMA Taiwan Semiconductor Corporation	2,671	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	5pF @ 4V, 1MHz	780 ns	1 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
S12KC R7G DIODE GEN PURP 800V 12A DO214AB Taiwan Semiconductor Corporation	2,839	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	78pF @ 4V, 1MHz	-	1 µA @ 800 V	800 V	12A	-55°C ~ 150°C	1.1 V @ 12 A
S4G R7G DIODE GEN PURP 400V 4A DO214AB Taiwan Semiconductor Corporation	3,020	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	-	10 µA @ 400 V	400 V	4A	-55°C ~ 150°C	1.15 V @ 4 A
SK12H45 R0G DIODE SCHOTTKY 45V 12A DO201AD Taiwan Semiconductor Corporation	3,867	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	120 µA @ 45 V	45 V	12A	200°C (Max)	550 mV @ 12 A
SK12H60 R0G DIODE SCHOTTKY 60V 12A DO201AD Taiwan Semiconductor Corporation	2,329	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	120 µA @ 60 V	60 V	12A	200°C (Max)	700 mV @ 12 A
SR1204 DIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation	2,885	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	12A	-50°C ~ 150°C	550 mV @ 12 A
ES2J M4G DIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation	2,357	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SR203 DIODE SCHOTTKY 2A 30V DO-15 Taiwan Semiconductor Corporation	3,712	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	2A (DC)	-55°C ~ 125°C	550 mV @ 2 A
SFF504G C0G DIODE GEN PURP 200V 5A ITO220AB Taiwan Semiconductor Corporation	3,514	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 150°C	980 mV @ 2.5 A
SFF505G C0G DIODE GEN PURP 300V 5A ITO220AB Taiwan Semiconductor Corporation	3,625	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	5A	-55°C ~ 150°C	1.3 V @ 2.5 A
S5A DIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation	2,390	-	RFQ		Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 50 V	50 V	5A	-55°C ~ 150°C	1.15 V @ 5 A
SFF1008GA C0G DIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation	3,144	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	10A	-55°C ~ 150°C	1.7 V @ 5 A
S3D V6G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	3,505	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	-
ES3DB M4G DIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation	3,614	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	46pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1 V @ 3 A
S1BL RUG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	3,650	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
S1DL RUG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	2,636	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
S1GL RUG DIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation	3,226	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
S1JL RUG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	3,579	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.1 V @ 1 A