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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFT16GHR0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,651 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SFT18GHR0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,688 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
SF2L8G R0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,781 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
SK110B M4GDIODE SCHOTTKY 100V 1A DO214AA Taiwan Semiconductor Corporation |
2,728 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
|
SS22LHR3GDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,285 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
SS25LHR3GDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,204 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
SS23LHRUGDIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation |
2,304 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
SS26LHRUGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,940 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
SF2L6GHR0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,501 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
ES2DA M2GDIODE GEN PURP 200V 2A DO214AC Taiwan Semiconductor Corporation |
3,157 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
ES2FA M2GDIODE GEN PURP 300V 2A DO214AC Taiwan Semiconductor Corporation |
3,470 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
ES2GA M2GDIODE GEN PURP 400V 2A DO214AC Taiwan Semiconductor Corporation |
3,525 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
HS3AB R5GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
3,602 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
ES2D R5GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,184 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SRT115HR0GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
2,164 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A |
|
|
ES2JA R3GDIODE GEN PURP 600V 2A DO214AC Taiwan Semiconductor Corporation |
2,805 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
UG2JA R3GDIODE GEN PURP 600V 2A DO214AC Taiwan Semiconductor Corporation |
3,220 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 55 ns | 2 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS1BL R3GDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,306 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS215HM4GDIODE SCHOTTKY 150V 2A DO214AA Taiwan Semiconductor Corporation |
3,852 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
ESH2C M4GDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,254 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A |
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