Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS2BADIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,331 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | ||
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SRAS20100HMNGDIODE SCHOTTKY 100V 20A TO263AB Taiwan Semiconductor Corporation |
3,415 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A |
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SRAS2040HMNGDIODE SCHOTTKY 40V 20A TO263AB Taiwan Semiconductor Corporation |
2,197 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
|
RS1AL R3GDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
3,088 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
SS1H10LW RVGDIODE SCHOTTKY 100V 1A SOD123W Taiwan Semiconductor Corporation |
2,160 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 nA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 800 mV @ 1 A | |
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SFS1604GHMNGDIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation |
3,790 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
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LL5817 L0GDIODE SCHOTTKY 20V 1A MELF Taiwan Semiconductor Corporation |
2,262 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 750 mV @ 3 A | |
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LL5819 L0GDIODE SCHOTTKY 40V 1A MELF Taiwan Semiconductor Corporation |
2,906 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
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SK39AHDIODE SCHOTTKY 90V 3A DO214AC Taiwan Semiconductor Corporation |
3,327 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 3A (DC) | -55°C ~ 150°C | 850 mV @ 3 A | |
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SFS1605GHMNGDIODE GEN PURP 300V 16A TO263AB Taiwan Semiconductor Corporation |
2,341 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SFS1606GHMNGDIODE GEN PURP 400V 16A TO263AB Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SS310HDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,085 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 850 mV @ 3 A | |
|
ES1GLWHRVGDIODE GEN PURP 400V 1A SOD123W Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
ES1JLWHRVGDIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation |
3,597 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
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ES2AADIODE GEN PURP 50V 2A DO214AC Taiwan Semiconductor Corporation |
3,403 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
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ES2BADIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
3,459 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
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SFAF806G C0GDIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation |
2,606 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
HS2KA R3GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,836 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
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SF2008PTHC0GDIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation |
2,087 | - |
RFQ |
![]() Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.9 V @ 20 A |
|
HS2GA R3GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,228 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |