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PMIC - драйверы затворов
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXDN609SIATRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,912 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDD609SIATRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,892 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDN602SIAIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,354 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN609SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,285 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDD609SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,665 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDD609SIAIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,623 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDD604SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,665 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
IX4427NTRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,994 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4426NTRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,731 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDI614SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,834 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN614YIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
2,423 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDD630MYIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
3,530 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN630YIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
2,727 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount |
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|
LF2103NTRGATE DRIVER HALF BRIDGE 0.13A IXYS Integrated Circuits Division |
2,905 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting | 600 V | 35ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
IXDN602SIATRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,890 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN614CIIC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division |
3,648 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IX4426NIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,750 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IX4340UE5-AMP DUAL LOW-SIDE MOSFET DRIVE IXYS Integrated Circuits Division |
2,476 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDD604SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,569 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
IXDD609PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
2,352 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole |
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