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PMIC - драйверы затворов
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXDI614SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,470 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDI614PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
2,958 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDN609SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,631 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDN604SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,543 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
IXDI614YIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
2,751 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDI630CIIC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division |
3,995 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole |
|
IXDI602D2TRIC GATE DRVR LOW-SIDE 8DFN IXYS Integrated Circuits Division |
3,541 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
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|
LF2106NTRGATE DRIVER HIGH/LOW SIDE 0.13A IXYS Integrated Circuits Division |
2,898 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 600 V | 100ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount |
|
IX4351NETRMOSFET IGBT SIC DRIVER 9A IXYS Integrated Circuits Division |
2,115 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, SiC MOSFET | -10V ~ 25V | 1V, 2.2V | 9A, 9A | CMOS, TTL | - | 10ns, 10ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
IXDN614SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,769 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDI630MCIIC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division |
3,481 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDF602D2TRIC GATE DRVR LOW-SIDE 8DFN IXYS Integrated Circuits Division |
2,582 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDF602PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
2,431 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDN602D2TRIC GATE DRVR LOW-SIDE 8DFN IXYS Integrated Circuits Division |
3,285 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDF604SIATRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,486 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
IXDF602SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,329 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDI602SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,214 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDF602SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,831 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDF604SITRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,291 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
IXDI630MYIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
2,346 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount |
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