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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXDN609PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
3,000 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole |
|
IXDN609SIAIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,761 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN604PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
3,200 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Through Hole |
|
|
IXDI604PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
933 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Through Hole |
|
|
IXDD614PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
3,003 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole |
|
IXDD609SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,929 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDI609YIIC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division |
2,067 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN609CIIC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division |
2,752 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDN614SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,296 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN630CIIC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division |
3,983 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole |
|
IX4426MTRIC GATE DRVR LOW-SIDE 8DFN IXYS Integrated Circuits Division |
3,157 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4340NTRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,832 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | CMOS/TTL | - | 7ns, 7ns | -55°C ~ 150°C | Surface Mount |
|
IX4340UETR5-AMP DUAL LOW-SIDE MOSFET DRIVE IXYS Integrated Circuits Division |
3,190 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXDI602SIATRIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,487 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4428NIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,004 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4427NIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,628 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4340NEIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,756 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IX4340NIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,397 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | CMOS/TTL | - | 7ns, 7ns | -55°C ~ 150°C | Surface Mount |
|
|
IXDI602PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
3,769 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDI602SIAIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,874 | - |
RFQ |
Технические |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount |
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