| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF3315STRLMOSFET N-CH 150V 21A D2PAK Infineon Technologies |
2,622 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
AUIRF7207QTRMOSFET P-CH 20V 5.4A 8SO Infineon Technologies |
3,671 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AUIRF7416QTRMOSFET P-CH 30V 10A 8SO Infineon Technologies |
2,489 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 2.04V @ 250µA | 92 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AUIRF7478QTRMOSFET N-CH 60V 7A 8SO Infineon Technologies |
3,432 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | 3V @ 250µA | 31 nC @ 4.5 V | ±20V | 1740 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AUIRF7734M2TRMOSFET N-CH 40V 17A DIRECTFET M2 Infineon Technologies |
3,693 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta) | 10V | 4.9mOhm @ 43A, 10V | 4V @ 100µA | 72 nC @ 10 V | ±20V | 2545 pF @ 25 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQU7P06TUMOSFET P-CH 60V 5.4A IPAK Fairchild Semiconductor |
2,807 | - |
RFQ |
Технические |
Tube | QFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.4A (Tc) | 10V | 451mOhm @ 2.7A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±25V | 295 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQPF1N60MOSFET N-CH 600V 900MA TO220F Fairchild Semiconductor |
3,519 | - |
RFQ |
Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 11.5Ohm @ 450mA, 10V | 5V @ 250µA | 6 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDB24AN06LA0MOSFET N-CH 60V 7.8A/40A TO263AB Fairchild Semiconductor |
3,172 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.8A (Ta), 40A (Tc) | 5V, 10V | 19mOhm @ 40A, 10V | 3V @ 250µA | 21 nC @ 5 V | ±20V | 1850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQA28N50FMOSFET N-CH 500V 28.4A TO3P Fairchild Semiconductor |
3,302 | - |
RFQ |
Технические |
Tube | FRFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28.4A (Tc) | 10V | 160mOhm @ 14.2A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±30V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
RFD14N05LSM9AMOSFET N-CH 50V 14A TO252AA Harris Corporation |
2,996 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 14A (Tc) | 5V | 100mOhm @ 14A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 670 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RFD14N05SMMOSFET N-CH 50V 14A TO252AA Fairchild Semiconductor |
3,073 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40 nC @ 20 V | ±20V | 570 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFP140MOSFET N-CH 100V 31A TO247-3 Fairchild Semiconductor |
2,379 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | - | 77mOhm @ 19A, 10V | 4V @ 250µA | 72 nC @ 10 V | - | 1700 pF @ 25 V | - | - | - | Through Hole |
|
IRFS3306PBFMOSFET N-CH 60V 120A D2PAK International Rectifier |
2,676 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
HAF1002-90STLMOSFET P-CH 60V 15A 4LDPAK Renesas Electronics America Inc |
2,240 | - |
RFQ |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | - | 90mOhm @ 7.5A, 10V | - | - | - | - | - | 50W (Tc) | 150°C (TJ) | Surface Mount | |
|
NDP6030PLMOSFET P-CH 30V 30A TO220-3 Fairchild Semiconductor |
3,173 | - |
RFQ |
Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 25mOhm @ 19A, 10V | 2V @ 250µA | 36 nC @ 5 V | ±16V | 1570 pF @ 15 V | - | 75W (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
|
IRF8714PBFMOSFET N-CH 30V 14A 8SO International Rectifier |
3,147 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1020 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFH5007TR2PBFMOSFET N-CH 75V 17A/100A 8PQFN International Rectifier |
2,216 | - |
RFQ |
Технические |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 17A (Ta), 100A (Tc) | - | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98 nC @ 10 V | - | 4290 pF @ 25 V | - | - | - | Surface Mount |
|
FDB42AN15A0MOSFET N-CH 150V 5A/35A TO263AB Fairchild Semiconductor |
3,639 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 35A (Tc) | 6V, 10V | 42mOhm @ 12A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQD12N20TFMOSFET N-CH 200V 9A DPAK Fairchild Semiconductor |
3,548 | - |
RFQ |
Технические |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RFP12N10LMOSFET N-CH 100V 12A TO220-3 Harris Corporation |
2,824 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 5V | 200mOhm @ 12A, 5V | 2V @ 250µA | - | ±10V | 900 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |