Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
H5N5005PL-E

H5N5005PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,794 -

RFQ

H5N5005PL-E

Технические

Bulk * Active - - - - - - - - - - - - - -
H7N0308CF-E

H7N0308CF-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,021 -

RFQ

H7N0308CF-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IPP260N06N3G

IPP260N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,725 -

RFQ

IPP260N06N3G

Технические

Bulk * Active - - - - - - - - - - - - - -
2SJ492-AZ

2SJ492-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,559 -

RFQ

2SJ492-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
IPP60R190C3

IPP60R190C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,622 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP60R520C6

IPP60R520C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,431 -

RFQ

IPP60R520C6

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R250CPXK

IPP60R250CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
2,290 -

RFQ

IPP60R250CPXK

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK7506-55A127

BUK7506-55A127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,157 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.3mOhm @ 25A, 10V 4V @ 1mA - ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS075N03LG

IPS075N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,916 -

RFQ

IPS075N03LG

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R600E6

IPP60R600E6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,108 -

RFQ

IPP60R600E6

Технические

Bulk * Active - - - - - - - - - - - - - -
IPP50R350CPXK

IPP50R350CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,794 -

RFQ

IPP50R350CPXK

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK755R4-100E127

BUK755R4-100E127

N-CHANNEL POWER MOSFET

Philips
3,644 -

RFQ

BUK755R4-100E127

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK78150-55A115

BUK78150-55A115

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,838 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK653R5-55C

BUK653R5-55C

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,257 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP65R280E6

IPP65R280E6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,773 -

RFQ

IPP65R280E6

Технические

Bulk * Active - - - - - - - - - - - - - -
IPS12CN10LG

IPS12CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,092 -

RFQ

IPS12CN10LG

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK7Y15-100E115

BUK7Y15-100E115

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,144 -

RFQ

BUK7Y15-100E115

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK7Y7R6-40E/C4115

BUK7Y7R6-40E/C4115

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,442 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ612-TD-E

2SJ612-TD-E

P-CHANNEL SILICON MOSFET

onsemi
2,778 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK7Y4R4-40E115

BUK7Y4R4-40E115

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,566 -

RFQ

BUK7Y4R4-40E115

Технические

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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