Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS4615PBF

IRFS4615PBF

MOSFET N-CH 150V 33A D2PAK

International Rectifier
3,473 -

RFQ

IRFS4615PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFL014NTR

AUIRFL014NTR

MOSFET N-CH 55V 1.5A SOT-223

Infineon Technologies
2,167 -

RFQ

AUIRFL014NTR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3714ZSPBF

IRL3714ZSPBF

MOSFET N-CH 20V 36A D2PAK

International Rectifier
2,895 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFL024NTR

AUIRFL024NTR

MOSFET N-CH 55V 2.8A SOT-223

Infineon Technologies
20,000 -

RFQ

AUIRFL024NTR

Технические

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF520

IRF520

MOSFET N-CH 100V 9.2A TO220AB

Motorola
2,055 -

RFQ

IRF520

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) - 270mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR3504TRL

AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

Infineon Technologies
3,759 -

RFQ

AUIRFR3504TRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 10V 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3607TRL

AUIRFS3607TRL

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
2,291 -

RFQ

AUIRFS3607TRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806TRL

AUIRFS3806TRL

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies
2,179 -

RFQ

AUIRFS3806TRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HAT2173N-EL-E

HAT2173N-EL-E

MOSFET N-CH 100V 25A 8LFPAK

Renesas Electronics America Inc
3,592 -

RFQ

HAT2173N-EL-E

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) - 15.3mOhm @ 12.5A, 10V 6V @ 20mA 61 nC @ 10 V - 4350 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
2SJ325-Z-AZ

2SJ325-Z-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
3,793 -

RFQ

2SJ325-Z-AZ

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
IPN60R2K1CE

IPN60R2K1CE

N-CHANNEL POWER MOSFET

Infineon Technologies
2,188 -

RFQ

IPN60R2K1CE

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
2SK974STL-E

2SK974STL-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
3,561 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
ISL9N312AD3ST_NL

ISL9N312AD3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,241 -

RFQ

ISL9N312AD3ST_NL

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
2SJ327-Z-AZ

2SJ327-Z-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
3,522 -

RFQ

2SJ327-Z-AZ

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
BTS244ZAKSA1

BTS244ZAKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,889 -

RFQ

BTS244ZAKSA1

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
ISL9N307AS3ST

ISL9N307AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,879 -

RFQ

ISL9N307AS3ST

Технические

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7mOhm @ 75A, 10V 3V @ 250µA 75 nC @ 10 V ±20V 3000 pF @ 15 V - 100W (Ta) -55°C ~ 175°C (TJ) Surface Mount
2SK975-E

2SK975-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,726 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
IPN80R1K4P7

IPN80R1K4P7

N-CHANNEL POWER MOSFET

Infineon Technologies
2,993 -

RFQ

IPN80R1K4P7

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
2SJ326-AZ

2SJ326-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
2,786 -

RFQ

2SJ326-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
IPP029N06NAK5A1

IPP029N06NAK5A1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,952 -

RFQ

IPP029N06NAK5A1

Технические

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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