Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK1284-Z-E2-AZ

2SK1284-Z-E2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,538 -

RFQ

2SK1284-Z-E2-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
2SK1306-E

2SK1306-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,408 -

RFQ

2SK1306-E

Технические

Bulk * Active - - - - - - - - - - - - - -
BUZ72A

BUZ72A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,426 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1299STL-E

2SK1299STL-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
2,906 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF640R

IRF640R

N-CHANNEL POWER MOSFET

Harris Corporation
3,253 -

RFQ

IRF640R

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630A

IRF630A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,547 -

RFQ

IRF630A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 650 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF453

IRF453

N-CHANNEL POWER MOSFET

Harris Corporation
3,974 -

RFQ

IRF453

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 7.2A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7224JANTXV

2N7224JANTXV

NPN POWER TRANSISTOR

Harris Corporation
3,230 -

RFQ

2N7224JANTXV

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 81mOhm @ 34A, 10V 4V @ 250µA 125 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ77B

BUZ77B

N-CHANNEL POWER MOSFET

Infineon Technologies
2,228 -

RFQ

BUZ77B

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF710R

IRF710R

N-CHANNEL POWER MOSFET

Harris Corporation
3,451 -

RFQ

IRF710R

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF612

IRF612

N-CHANNEL POWER MOSFET

Harris Corporation
2,569 -

RFQ

IRF612

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ24NSTRR

AUIRFZ24NSTRR

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
2,023 -

RFQ

AUIRFZ24NSTRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44NSTRL

AUIRFZ44NSTRL

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies
800 -

RFQ

AUIRFZ44NSTRL

Технические

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) - 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V - 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1399-T1B-A

2SK1399-T1B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,494 -

RFQ

2SK1399-T1B-A

Технические

Bulk * Active - - - - - - - - - - - - - -
AUIRL1404STRL

AUIRL1404STRL

MOSFET N-CH 40V 160A DPAK

Infineon Technologies
3,578 -

RFQ

AUIRL1404STRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1334BY90TR-E

2SK1334BY90TR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,763 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRL7766M2TR

AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET

Infineon Technologies
3,819 -

RFQ

AUIRL7766M2TR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 10mOhm @ 31A, 10V 2.5V @ 150µA 66 nC @ 4.5 V ±16V 5305 pF @ 25 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1318-E

2SK1318-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,331 -

RFQ

2SK1318-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF633

IRF633

N-CHANNEL POWER MOSFET

Harris Corporation
3,366 -

RFQ

IRF633

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF712

IRF712

N-CHANNEL POWER MOSFET

Harris Corporation
3,836 -

RFQ

IRF712

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 5Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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