| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N6755N-CHANNEL POWER MOSFET International Rectifier |
2,946 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUZ32INN-CHANNEL POWER MOSFET Infineon Technologies |
2,857 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
2SK1167-EN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
3,444 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK9880-55/CU135N-CHANNEL POWER MOSFET NXP USA Inc. |
2,650 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7002D87ZN-CHANNEL SMALL SIGNAL MOSFET Fairchild Semiconductor |
2,918 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 200mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SK1273(0)-T1-AZPOWER FIELD-EFFECT TRANSISTOR Renesas Electronics America Inc |
2,638 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUZ102SLN-CHANNEL POWER MOSFET Infineon Technologies |
2,439 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUZ103SLN-CHANNEL POWER MOSFET Infineon Technologies |
2,281 | - |
RFQ |
Технические |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPW90R800C3N-CHANNEL POWER MOSFET Infineon Technologies |
2,088 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUZ101SLN-CHANNEL POWER MOSFET Infineon Technologies |
3,597 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7002PS/ZL115N-CHANNEL SMALL SIGNAL MOSFET NXP USA Inc. |
3,719 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7002BKV/DG/B2115N-CHANNEL SMALL SIGNAL MOSFET NXP USA Inc. |
3,803 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK1161-EN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
3,861 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
2N6786N-CHANNEL POWER MOSFET Harris Corporation |
3,895 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.25A (Tc) | 10V | 3.7Ohm @ 1.25A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF341N-CHANNEL POWER MOSFET Harris Corporation |
3,892 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 10A (Tc) | 10V | 550mOhm @ 5.2A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF620BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,775 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±30V | 390 pF @ 25 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUZ355N-CHANNEL POWER MOSFET Infineon Technologies |
3,199 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUZ103SL-E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
2,670 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF442N-CHANNEL POWER MOSFET Harris Corporation |
3,754 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Tc) | 10V | 1.1Ohm @ 4.4A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1225 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUZ311N-CHANNEL POWER MOSFET Infineon Technologies |
2,760 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |