Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7Y25-80E/GF115

BUK7Y25-80E/GF115

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,653 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF133

IRF133

N-CHANNEL POWER MOSFET

Harris Corporation
2,274 -

RFQ

IRF133

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 230mOhm @ 8.3A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R190C6

IPW65R190C6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,411 -

RFQ

IPW65R190C6

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R15OCFDAFKSA1

IPW65R15OCFDAFKSA1

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies
2,230 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1095-90-E

2SK1095-90-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,920 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPW65R280E6

IPW65R280E6

650 V COOLMOS E6 POWER MOSFET

Infineon Technologies
3,911 -

RFQ

IPW65R280E6

Технические

Bulk * Active - - - - - - - - - - - - - -
2SK1133-T2B-A

2SK1133-T2B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,793 -

RFQ

2SK1133-T2B-A

Технические

Bulk * Active - - - - - - - - - - - - - -
2N6757

2N6757

N-CHANNEL POWER MOSFET

Harris Corporation
2,230 -

RFQ

2N6757

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6895

2N6895

P-CHANNEL, MOSFET

Harris Corporation
2,774 -

RFQ

2N6895

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 1.16A (Tc) 10V 3.65Ohm @ 740mA, 10V 4V @ 250µA - ±20V 150 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9875-100A/C1115

BUK9875-100A/C1115

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,181 -

RFQ

BUK9875-100A/C1115

Технические

Bulk * Active - - - - - - - - - - - - - -
2N6756

2N6756

N-CHANNEL POWER MOSFET

Harris Corporation
3,582 -

RFQ

2N6756

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 210mOhm @ 14A, 10V 4V @ 250µA 35 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1095-97-E

2SK1095-97-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,369 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2N6767

2N6767

N-CHANNEL POWER MOSFET

Harris Corporation
3,097 -

RFQ

2N6767

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 400mOhm @ 7.75A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9K5R1-30E115

BUK9K5R1-30E115

N-CHANNEL POWER MOSFET

Nexperia USA Inc.
2,378 -

RFQ

BUK9K5R1-30E115

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK9840-55115

BUK9840-55115

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,600 -

RFQ

BUK9840-55115

Технические

Bulk * Active - - - - - - - - - - - - - -
2N7002BKS/DG/B2115

2N7002BKS/DG/B2115

N-CHANNEL SMALL SIGNAL MOSFET

Nexperia USA Inc.
3,865 -

RFQ

2N7002BKS/DG/B2115

Технические

Bulk * Active - - - - - - - - - - - - - -
2N6760

2N6760

N-CHANNEL POWER MOSFET

Harris Corporation
3,527 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1.22Ohm @ 5.5A, 10V 4V @ 250µA 39 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ102SL-E3045A

BUZ102SL-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,039 -

RFQ

BUZ102SL-E3045A

Технические

Bulk * Active - - - - - - - - - - - - - -
2N6761

2N6761

N-CHANNEL POWER MOSFET

Harris Corporation
3,615 -

RFQ

2N6761

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A (Tc) 10V 2Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF122

IRF122

N-CHANNEL POWER MOSFET

Harris Corporation
3,958 -

RFQ

IRF122

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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