| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUK7Y25-80E/GF115N-CHANNEL POWER MOSFET NXP USA Inc. |
2,653 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IRF133N-CHANNEL POWER MOSFET Harris Corporation |
2,274 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Tc) | 10V | 230mOhm @ 8.3A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPW65R190C6N-CHANNEL POWER MOSFET Infineon Technologies |
3,411 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPW65R15OCFDAFKSA1N-CHANNEL AUTOMOTIVE MOSFET Infineon Technologies |
2,230 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
2SK1095-90-EN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,920 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IPW65R280E6650 V COOLMOS E6 POWER MOSFET Infineon Technologies |
3,911 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK1133-T2B-ASMALL SIGNAL N-CHANNEL MOSFET Renesas Electronics America Inc |
2,793 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N6757N-CHANNEL POWER MOSFET Harris Corporation |
2,230 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 8A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
2N6895P-CHANNEL, MOSFET Harris Corporation |
2,774 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 1.16A (Tc) | 10V | 3.65Ohm @ 740mA, 10V | 4V @ 250µA | - | ±20V | 150 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUK9875-100A/C1115N-CHANNEL POWER MOSFET NXP USA Inc. |
3,181 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N6756N-CHANNEL POWER MOSFET Harris Corporation |
3,582 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 210mOhm @ 14A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | - | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
2SK1095-97-EN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,369 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
2N6767N-CHANNEL POWER MOSFET Harris Corporation |
3,097 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 12A (Tc) | 10V | 400mOhm @ 7.75A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUK9K5R1-30E115N-CHANNEL POWER MOSFET Nexperia USA Inc. |
2,378 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK9840-55115N-CHANNEL POWER MOSFET NXP USA Inc. |
2,600 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7002BKS/DG/B2115N-CHANNEL SMALL SIGNAL MOSFET Nexperia USA Inc. |
3,865 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N6760N-CHANNEL POWER MOSFET Harris Corporation |
3,527 | - |
RFQ |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1.22Ohm @ 5.5A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | - | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
BUZ102SL-E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
2,039 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N6761N-CHANNEL POWER MOSFET Harris Corporation |
3,615 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF122N-CHANNEL POWER MOSFET Harris Corporation |
3,958 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |