Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR7807ZPBF

IRLR7807ZPBF

HEXFET POWER MOSFET

International Rectifier
2,685 -

RFQ

IRLR7807ZPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB61N15DPBF

IRFB61N15DPBF

MOSFET N-CH 150V 60A TO220AB

International Rectifier
2,517 -

RFQ

IRFB61N15DPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) - 32mOhm @ 36A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3470 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4115GPBF

IRFB4115GPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,530 -

RFQ

IRFB4115GPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 104A (Tc) 10V 11mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3103PBF

IRLU3103PBF

MOSFET N-CH 30V 55A IPAK

International Rectifier
3,098 -

RFQ

IRLU3103PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) - 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI7440GPBF

IRFI7440GPBF

IRFI7440 - HEXFET POWER MOSFET

International Rectifier
3,902 -

RFQ

IRFI7440GPBF

Технические

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2.5mOhm @ 57A, 10V 3.9V @ 100µA 132 nC @ 10 V ±20V 4549 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSZ0500NSIATMA1

BSZ0500NSIATMA1

MOSFET N-CH 30V 30A/40A TSDSON

Infineon Technologies
2,216 -

RFQ

BSZ0500NSIATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 40A (Tc) 4.5V, 10V 1.5mOhm @ 20A, 10V 2V @ 250µA 52 nC @ 10 V ±20V 3400 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVTFS4C02NWFTAG

NVTFS4C02NWFTAG

MOSFET - SINGLE N-CHANNEL POWER

onsemi
3,375 -

RFQ

NVTFS4C02NWFTAG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 28.3A (Ta), 162A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 2.2V @ 250µA 45 nC @ 10 V ±20V 2980 pF @ 15 V - 3.2W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
SI2392DS-T1-GE3

SI2392DS-T1-GE3

MOSFET N-CH 100V 3.1A SOT-23

Vishay Siliconix
2,382 -

RFQ

SI2392DS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 4.5V, 10V 126mOhm @ 2A, 10V 3V @ 250µA 10.4 nC @ 10 V ±20V 196 pF @ 50 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5415EDU-T1-GE3

SI5415EDU-T1-GE3

MOSFET P-CH 20V 25A PPAK

Vishay Siliconix
3,141 -

RFQ

SI5415EDU-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 25A (Tc) 1.8V, 4.5V 9.8mOhm @ 10A, 4.5V 1V @ 250µA 120 nC @ 8 V ±8V 4300 pF @ 10 V - 3.1W (Ta), 31W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIA439EDJ-T1-GE3

SIA439EDJ-T1-GE3

MOSFET P-CH 20V 28A PPAK SC70-6

Vishay Siliconix
2,559 -

RFQ

SIA439EDJ-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 28A (Tc) 1.8V, 4.5V 16.5mOhm @ 5A, 4.5V 1V @ 250µA 69 nC @ 8 V ±8V 2410 pF @ 10 V - 3.5W (Ta), 19W (Tc) -50°C ~ 150°C (TJ) Surface Mount
AUIRF7484QTR

AUIRF7484QTR

AUTOMOTIVE N CHANNEL

International Rectifier
2,227 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK6R8A08QM,S4X

TK6R8A08QM,S4X

UMOS10 TO-220SIS 80V 6.8MOHM

Toshiba Semiconductor and Storage
3,155 -

RFQ

TK6R8A08QM,S4X

Технические

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 58A (Tc) 6V, 10V 6.8mOhm @ 29A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 41W (Tc) 175°C Through Hole
IRLL3303TRPBF

IRLL3303TRPBF

HEXFET POWER MOSFET

International Rectifier
3,009 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA467EDJ-T1-GE3

SIA467EDJ-T1-GE3

MOSFET P-CH 12V 31A PPAK SC70-6

Vishay Siliconix
3,372 -

RFQ

SIA467EDJ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 31A (Tc) 1.8V, 4.5V 13mOhm @ 5A, 4.5V 1V @ 250µA 72 nC @ 8 V ±8V 2520 pF @ 6 V - 3.5W (Ta), 19W (Tc) -50°C ~ 150°C (TJ) Surface Mount
STS3P6F6

STS3P6F6

MOSFET P-CH 60V 3A 8SOIC

STMicroelectronics
3,184 -

RFQ

STS3P6F6

Технические

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Obsolete P-Channel MOSFET (Metal Oxide) 60 V 3A (Tj) 10V 160mOhm @ 1.5A, 10V 4V @ 250µA 6.4 nC @ 10 V ±20V 340 pF @ 48 V - 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS8403TRL

AUIRFS8403TRL

MOSFET N-CH 40V 123A D2PAK

Infineon Technologies
800 -

RFQ

AUIRFS8403TRL

Технические

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006PBF

IRFS3006PBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,366 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408-7TRR

AUIRFS8408-7TRR

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,804 -

RFQ

AUIRFS8408-7TRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8405TRL

AUIRFS8405TRL

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
3,467 -

RFQ

AUIRFS8405TRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8405

AUIRFSL8405

MOSFET N-CH 40V 120A TO262

Infineon Technologies
3,923 -

RFQ

AUIRFSL8405

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
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15,000+ Складские запасы
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