Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP044NPBF

IRFP044NPBF

HEXFET POWER MOSFET

International Rectifier
3,265 -

RFQ

IRFP044NPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM21N700T2

RM21N700T2

MOSFET N-CH 700V 21A TO220-3

Rectron USA
2,287 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM21N700TI

RM21N700TI

MOSFET N-CHANNEL 700V 21A TO220F

Rectron USA
3,638 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS4115PBF

IRFS4115PBF

HEXFET POWER MOSFET

International Rectifier
3,330 -

RFQ

IRFS4115PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P407ATMA2

IPB80P04P407ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
3,735 -

RFQ

IPB80P04P407ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation
2,684 -

RFQ

HUF75333S3

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8113PBF

IRF8113PBF

HEXFET POWER MOSFET

International Rectifier
2,217 -

RFQ

IRF8113PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RJK0456DPB-00#J5

RJK0456DPB-00#J5

MOSFET N-CH 40V 50A LFPAK

Renesas Electronics America Inc
3,032 -

RFQ

RJK0456DPB-00#J5

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 10V 3.2mOhm @ 25A, 10V - 39 nC @ 10 V ±20V 3000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
IRFHM4226TRPBF

IRFHM4226TRPBF

MOSFET N CH 25V 28A PQFN

Infineon Technologies
3,119 -

RFQ

IRFHM4226TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.1V @ 50µA 32 nC @ 10 V ±20V 2000 pF @ 13 V - 2.7W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM4234TRPBF

IRFHM4234TRPBF

MOSFET N-CH 25V 20A PQFN

Infineon Technologies
3,235 -

RFQ

IRFHM4234TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 20A (Ta) 4.5V, 10V 4.4mOhm @ 30A, 10V 2.1V @ 25µA 17 nC @ 10 V ±20V 1011 pF @ 13 V - 2.8W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK8A10K3,S5Q

TK8A10K3,S5Q

MOSFET N-CH 100V 8A TO220SIS

Toshiba Semiconductor and Storage
2,817 -

RFQ

TK8A10K3,S5Q

Технические

Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta) 10V 120mOhm @ 4A, 10V 4V @ 1mA 12.9 nC @ 10 V ±20V 530 pF @ 10 V - 18W (Tc) 150°C (TJ) Through Hole
RJK0656DPB-00#J5

RJK0656DPB-00#J5

MOSFET N-CH 60V 40A LFPAK

Renesas Electronics America Inc
2,511 -

RFQ

RJK0656DPB-00#J5

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 5.6mOhm @ 20A, 10V - 40 nC @ 10 V ±20V 3000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
RJK1056DPB-00#J5

RJK1056DPB-00#J5

MOSFET N-CH 100V 25A LFPAK

Renesas Electronics America Inc
3,458 -

RFQ

RJK1056DPB-00#J5

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 10V 14mOhm @ 12.5A, 10V - 41 nC @ 10 V ±20V 3000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
IRF8721PBF

IRF8721PBF

MOSFET N-CH 30V 14A 8SO

International Rectifier
3,758 -

RFQ

IRF8721PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD3680

FDD3680

MOSFET N-CH 100V 25A TO252

onsemi
2,382 -

RFQ

FDD3680

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 6V, 10V 46mOhm @ 6.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1735 pF @ 50 V - 68W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDD5670

FDD5670

MOSFET N-CH 60V 52A TO252

onsemi
3,458 -

RFQ

FDD5670

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 52A (Ta) 6V, 10V 15mOhm @ 10A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 2739 pF @ 15 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB11P06TM

FQB11P06TM

MOSFET P-CH 60V 11.4A D2PAK

onsemi
2,144 -

RFQ

FQB11P06TM

Технические

Tape & Reel (TR),Cut Tape (CT) QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7664

FDMC7664

MOSFET N-CH 30V 18.8A/24A 8MLP

onsemi
2,345 -

RFQ

FDMC7664

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18.8A (Ta), 24A (Tc) 4.5V, 10V 4.2mOhm @ 18.8A, 10V 3V @ 250µA 76 nC @ 10 V ±20V 4865 pF @ 15 V - 2.3W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDG410NZ

FDG410NZ

MOSFET N-CH 20V 2.2A SC88

onsemi
3,295 -

RFQ

FDG410NZ

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.5V, 4.5V 70mOhm @ 2.2A, 4.5V 1V @ 250µA 7.2 nC @ 4.5 V ±8V 535 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD50R1K4CEBTMA1

IPD50R1K4CEBTMA1

MOSFET N-CH 500V 3.1A TO252-3

Infineon Technologies
3,441 -

RFQ

IPD50R1K4CEBTMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 1 nC @ 10 V ±20V 178 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ производители
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