| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP044NPBFHEXFET POWER MOSFET International Rectifier |
3,265 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 20mOhm @ 29A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
RM21N700T2MOSFET N-CH 700V 21A TO220-3 Rectron USA |
2,287 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 21A (Tc) | 10V | 190mOhm @ 10.5A, 10V | 3.5V @ 250µA | - | ±30V | 1950 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
RM21N700TIMOSFET N-CHANNEL 700V 21A TO220F Rectron USA |
3,638 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 21A (Tc) | 10V | 190mOhm @ 10.5A, 10V | 3.5V @ 250µA | - | ±30V | 1950 pF @ 50 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IRFS4115PBFHEXFET POWER MOSFET International Rectifier |
3,330 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPB80P04P407ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
3,735 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
HUF75333S3MOSFET N-CH 55V 66A D2PAK Harris Corporation |
2,684 | - |
RFQ |
Технические |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | - | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF8113PBFHEXFET POWER MOSFET International Rectifier |
2,217 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RJK0456DPB-00#J5MOSFET N-CH 40V 50A LFPAK Renesas Electronics America Inc |
3,032 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 10V | 3.2mOhm @ 25A, 10V | - | 39 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
|
IRFHM4226TRPBFMOSFET N CH 25V 28A PQFN Infineon Technologies |
3,119 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.1V @ 50µA | 32 nC @ 10 V | ±20V | 2000 pF @ 13 V | - | 2.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFHM4234TRPBFMOSFET N-CH 25V 20A PQFN Infineon Technologies |
3,235 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FASTIRFET™, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 30A, 10V | 2.1V @ 25µA | 17 nC @ 10 V | ±20V | 1011 pF @ 13 V | - | 2.8W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
TK8A10K3,S5QMOSFET N-CH 100V 8A TO220SIS Toshiba Semiconductor and Storage |
2,817 | - |
RFQ |
Технические |
Tube | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9 nC @ 10 V | ±20V | 530 pF @ 10 V | - | 18W (Tc) | 150°C (TJ) | Through Hole |
|
RJK0656DPB-00#J5MOSFET N-CH 60V 40A LFPAK Renesas Electronics America Inc |
2,511 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 10V | 5.6mOhm @ 20A, 10V | - | 40 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
|
RJK1056DPB-00#J5MOSFET N-CH 100V 25A LFPAK Renesas Electronics America Inc |
3,458 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta) | 10V | 14mOhm @ 12.5A, 10V | - | 41 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
|
IRF8721PBFMOSFET N-CH 30V 14A 8SO International Rectifier |
3,758 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | - | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDD3680MOSFET N-CH 100V 25A TO252 onsemi |
2,382 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta) | 6V, 10V | 46mOhm @ 6.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1735 pF @ 50 V | - | 68W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDD5670MOSFET N-CH 60V 52A TO252 onsemi |
3,458 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 52A (Ta) | 6V, 10V | 15mOhm @ 10A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 2739 pF @ 15 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQB11P06TMMOSFET P-CH 60V 11.4A D2PAK onsemi |
2,144 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | QFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 3.13W (Ta), 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDMC7664MOSFET N-CH 30V 18.8A/24A 8MLP onsemi |
2,345 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18.8A (Ta), 24A (Tc) | 4.5V, 10V | 4.2mOhm @ 18.8A, 10V | 3V @ 250µA | 76 nC @ 10 V | ±20V | 4865 pF @ 15 V | - | 2.3W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDG410NZMOSFET N-CH 20V 2.2A SC88 onsemi |
3,295 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 1.5V, 4.5V | 70mOhm @ 2.2A, 4.5V | 1V @ 250µA | 7.2 nC @ 4.5 V | ±8V | 535 pF @ 10 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPD50R1K4CEBTMA1MOSFET N-CH 500V 3.1A TO252-3 Infineon Technologies |
3,441 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ CE | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 1 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |