Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
JANTX2N7224U

JANTX2N7224U

MOSFET N-CH 100V 34A TO267AB

Microsemi Corporation
3,802 -

RFQ

JANTX2N7224U

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 81mOhm @ 34A, 10V 4V @ 250µA 125 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTX2N7225

JANTX2N7225

MOSFET N-CH 200V 27.4A TO254AA

Microsemi Corporation
3,125 -

RFQ

JANTX2N7225

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 27.4A (Tc) 10V 105mOhm @ 27.4A, 10V 4V @ 250µA 115 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTX2N7225U

JANTX2N7225U

MOSFET N-CH 200V 27.4A TO267AB

Microsemi Corporation
2,219 -

RFQ

JANTX2N7225U

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 27.4A (Tc) 10V 105mOhm @ 27.4A, 10V 4V @ 250µA 115 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTX2N7227

JANTX2N7227

MOSFET N-CH 400V 14A TO254AA

Microsemi Corporation
3,719 -

RFQ

JANTX2N7227

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 415mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTX2N7227U

JANTX2N7227U

MOSFET N-CH 400V 14A TO267AB

Microsemi Corporation
3,940 -

RFQ

JANTX2N7227U

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 415mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTX2N7228

JANTX2N7228

MOSFET N-CH 500V 12A TO254AA

Microsemi Corporation
2,541 -

RFQ

JANTX2N7228

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 515mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTX2N7228U

JANTX2N7228U

MOSFET N-CH 500V 12A TO267AB

Microsemi Corporation
2,884 -

RFQ

JANTX2N7228U

Технические

Bulk Military, MIL-PRF-19500/592 Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 515mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTX2N7236

JANTX2N7236

MOSFET P-CH 100V 18A TO254AA

Microsemi Corporation
2,797 -

RFQ

JANTX2N7236

Технические

Bulk Military, MIL-PRF-19500/595 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 220mOhm @ 18A, 10V 4V @ 250µA 60 nC @ 10 V ±20V - - 4W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTX2N7236U

JANTX2N7236U

MOSFET P-CH 100V 18A TO267AB

Microsemi Corporation
3,336 -

RFQ

JANTX2N7236U

Технические

Bulk Military, MIL-PRF-19500/595 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 220mOhm @ 18A, 10V 4V @ 250µA 60 nC @ 10 V ±20V - - 4W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTXV2N6756

JANTXV2N6756

MOSFET N-CH 100V 14A TO204AA

Microsemi Corporation
2,288 -

RFQ

JANTXV2N6756

Технические

Bulk Military, MIL-PRF-19500/542 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 210mOhm @ 14A, 10V 4V @ 250µA 35 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJQ148ER-T1_GE3

SQJQ148ER-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
2,346 -

RFQ

SQJQ148ER-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 372A (Tc) 10V 1.5mOhm @ 20A, 10V 3.5V @ 250µA 102 nC @ 10 V ±20V 5750 pF @ 25 V - 394W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK6C2R1-55C,118-NX

BUK6C2R1-55C,118-NX

PFET, 228A I(D), 55V, 0.0037OHM

NXP USA Inc.
3,876 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 228A (Tc) 10V 2.3mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 16000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ)
PMN40UPE,115-NEX

PMN40UPE,115-NEX

TRANSISTOR

Nexperia USA Inc.
2,341 -

RFQ

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V 950mV @ 250µA 23 nC @ 4.5 V ±8V 1820 pF @ 10 V - 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840BPBF-BE3

IRF840BPBF-BE3

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix
2,080 -

RFQ

IRF840BPBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) - 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3670

FDD3670

MOSFET N-CH 100V 34A TO252

onsemi
3,375 -

RFQ

FDD3670

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Ta) 6V, 10V 32mOhm @ 7.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR220DP-T1-RE3

SIDR220DP-T1-RE3

N-CHANNEL 25-V (D-S) MOSFET

Vishay Siliconix
2,637 -

RFQ

SIDR220DP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 87.7A (Ta), 100A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 10850 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK0328DPB-01#J0

RJK0328DPB-01#J0

MOSFET N-CH 30V 60A LFPAK

Renesas Electronics America Inc
3,058 -

RFQ

RJK0328DPB-01#J0

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.5V @ 1mA 42 nC @ 4.5 V ±20V 6380 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
RJK0856DPB-00#J5

RJK0856DPB-00#J5

MOSFET N-CH 80V 35A LFPAK

Renesas Electronics America Inc
3,380 -

RFQ

RJK0856DPB-00#J5

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta) 10V 8.9mOhm @ 17.5A, 10V - 40 nC @ 10 V ±20V 3000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
PJP7NA60_T0_00001

PJP7NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.
3,727 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 15.2 nC @ 10 V ±30V 723 pF @ 25 V - 145W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC0806NLSATMA1

ISC0806NLSATMA1

MOSFET N-CH 100V 16A/97A TDSON

Infineon Technologies
2,496 -

RFQ

ISC0806NLSATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 97A (Tc) 4.5V, 10V 5.4mOhm @ 50A, 10V 2.3V @ 61µA 49 nC @ 10 V ±20V 3400 pF @ 50 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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