Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
JANTXV2N6796

JANTXV2N6796

MOSFET N-CH 100V 8A TO205AF

Microsemi Corporation
3,470 -

RFQ

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 195mOhm @ 8A, 10V 4V @ 250µA 28.51 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6796U

JANTXV2N6796U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation
2,434 -

RFQ

JANTXV2N6796U

Технические

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 195mOhm @ 8A, 10V 4V @ 250µA 28.51 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTXV2N6798

JANTXV2N6798

MOSFET N-CH 200V 5.5A TO205AF

Microsemi Corporation
3,757 -

RFQ

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 420mOhm @ 5.5A, 10V 4V @ 250µA 42.07 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6798U

JANTXV2N6798U

MOSFET N-CH 200V 5.5A 18ULCC

Microsemi Corporation
3,485 -

RFQ

JANTXV2N6798U

Технические

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 420mOhm @ 5.5A, 10V 4V @ 250µA 42.07 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTXV2N6800

JANTXV2N6800

MOSFET N-CH 400V 3A TO205AF

Microsemi Corporation
2,153 -

RFQ

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.1Ohm @ 3A, 10V 4V @ 250µA 34.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6800U

JANTXV2N6800U

MOSFET N-CH 400V 3A 18ULCC

Microsemi Corporation
2,312 -

RFQ

JANTXV2N6800U

Технические

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.1Ohm @ 3A, 10V 4V @ 250µA 34.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTXV2N6802

JANTXV2N6802

MOSFET N-CH 500V 2.5A TO205AF

Microsemi Corporation
3,099 -

RFQ

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.6Ohm @ 2.5A, 10V 4V @ 250µA 33 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6802U

JANTXV2N6802U

MOSFET N-CH 500V 2.5A 18ULCC

Microsemi Corporation
2,561 -

RFQ

JANTXV2N6802U

Технические

Bulk Military, MIL-PRF-19500/557 Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.6Ohm @ 2.5A, 10V 4V @ 250µA 33 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
JANTXV2N6804

JANTXV2N6804

MOSFET P-CH 100V 11A TO204AA

Microsemi Corporation
3,505 -

RFQ

JANTXV2N6804

Технические

Bulk Military, MIL-PRF-19500/562 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 360mOhm @ 11A, 10V 4V @ 250µA 29 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6849

JANTXV2N6849

MOSFET P-CH 100V 6.5A TO205AF

Microsemi Corporation
3,846 -

RFQ

JANTXV2N6849

Технические

Bulk Military, MIL-PRF-19500/564 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6849U

JANTXV2N6849U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation
2,711 -

RFQ

JANTXV2N6849U

Технические

Bulk Military, MIL-PRF-19500/564 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6004PND3FRATL

R6004PND3FRATL

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor
2,708 -

RFQ

R6004PND3FRATL

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4.5V @ 1mA 11 nC @ 10 V ±25V 280 pF @ 25 V - 65W (Tc) 150°C (TJ) Surface Mount
NTMFS4D2N10MDT1G

NTMFS4D2N10MDT1G

N-CHANNEL SHIELDED GATE POWERTRE

onsemi
3,779 -

RFQ

NTMFS4D2N10MDT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 16.4A (Ta), 113A (Tc) 6V, 10V 4.3mOhm @ 46A, 10V 4V @ 239µA 60 nC @ 10 V ±20V 3100 pF @ 50 V - 2.8W (Ta), 132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA20N50E-GE3

SIHA20N50E-GE3

N-CHANNEL 500V

Vishay Siliconix
2,770 -

RFQ

SIHA20N50E-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTTFS4C50NTAG

NTTFS4C50NTAG

MOSFET N-CH 30V 75A 8WDFN

onsemi
2,514 -

RFQ

Tape & Reel (TR),Cut Tape (CT),Bulk - Active - - - 19.4A (Ta) - - - - - - - - - Surface Mount
NVTFWS002N04CLTAG

NVTFWS002N04CLTAG

MOSFET N-CH 40V 28A/142A 8WDFN

onsemi
2,262 -

RFQ

NVTFWS002N04CLTAG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 142A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 90µA 49 nC @ 10 V ±20V 2940 pF @ 25 V - 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C628NLAFT1G

NVMFS5C628NLAFT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi
3,767 -

RFQ

NVMFS5C628NLAFT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix
2,047 -

RFQ

SIDR5102EP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 28.2A (Ta), 126A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2850 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIJA54ADP-T1-GE3

SIJA54ADP-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix
2,934 -

RFQ

SIJA54ADP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 35.4A (Ta), 126A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NP50P04KDG-E1-AY

NP50P04KDG-E1-AY

MOSFET P-CH 40V 50A TO263

Renesas Electronics America Inc
2,530 -

RFQ

NP50P04KDG-E1-AY

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 100 nC @ 10 V ±20V 5100 pF @ 10 V - 1.8W (Ta), 90W (Tc) 175°C (TJ) Surface Mount
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20,000.000 Продукты
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