Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS5C628NLWFAFT1G

NVMFS5C628NLWFAFT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi
3,298 -

RFQ

NVMFS5C628NLWFAFT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM140N150T2

RM140N150T2

MOSFET N-CH 150V 140A TO220-3

Rectron USA
3,002 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 140A (Tc) 10V 6.2mOhm @ 70A, 10V 4V @ 250µA - ±20V 5900 pF @ 75 V - 320W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM180N100T2

RM180N100T2

MOSFET N-CH 100V 180A TO220-3

Rectron USA
3,117 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA - ±20V 1150 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
R8002CND3FRATL

R8002CND3FRATL

MOSFET N-CH 800V 2A TO252

Rohm Semiconductor
2,500 -

RFQ

R8002CND3FRATL

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5.5V @ 1mA 12.1 nC @ 10 V ±30V 240 pF @ 25 V - 69W (Tc) 150°C (TJ) Surface Mount
IRFR014PBF-BE3

IRFR014PBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,476 -

RFQ

IRFR014PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) - 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM17N800TI

RM17N800TI

MOSFET N-CHANNEL 800V 17A TO220F

Rectron USA
2,580 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800T2

RM17N800T2

MOSFET N-CH 800V 17A TO220-3

Rectron USA
3,549 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800HD

RM17N800HD

MOSFET N-CH 800V 17A TO263-2

Rectron USA
2,004 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C645NLWFAFT1G

NVMFS5C645NLWFAFT1G

MOSFET N-CH 60V 22A 5DFN

onsemi
3,373 -

RFQ

NVMFS5C645NLWFAFT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIDR5802EP-T1-RE3

SIDR5802EP-T1-RE3

N-CHANNEL 80 V (D-S) 175C MOSFET

Vishay Siliconix
2,851 -

RFQ

SIDR5802EP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 34.2A (Ta), 153A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3020 pF @ 40 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC037N08NS5TATMA1

BSC037N08NS5TATMA1

MOSFET N-CH 80V 22A/100A TDSON

Infineon Technologies
2,138 -

RFQ

BSC037N08NS5TATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR010PBF-BE3

IRFR010PBF-BE3

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix
2,137 -

RFQ

IRFR010PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) - 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS6H836NT1G

NTMFS6H836NT1G

MOSFET N-CH 80V 15A/74A 5DFN

onsemi
2,269 -

RFQ

NTMFS6H836NT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 15A (Ta), 74A (Tc) 6V, 10V 6.7mOhm @ 15A, 10V 4V @ 95µA 25 nC @ 10 V ±20V 1640 pF @ 40 V - 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB17P10TM

FQB17P10TM

MOSFET P-CH 100V 16.5A D2PAK

Fairchild Semiconductor
2,936 -

RFQ

FQB17P10TM

Технические

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 16.5A (Tc) 10V 190mOhm @ 8.25A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N04S2-H4

IPP80N04S2-H4

N-CHANNEL POWER MOSFET

Infineon Technologies
3,871 -

RFQ

IPP80N04S2-H4

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW90R1K0C3

IPW90R1K0C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,550 -

RFQ

IPW90R1K0C3

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF223

IRF223

N-CHANNEL POWER MOSFET

Harris Corporation
3,136 -

RFQ

IRF223

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC100N08S5N031ATMA1

IAUC100N08S5N031ATMA1

MOSFET N-CH 80V 100A TDSON-8-34

Infineon Technologies
2,031 -

RFQ

IAUC100N08S5N031ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.1mOhm @ 50A, 10V 3.8V @ 95µA 76 nC @ 10 V ±20V 5525 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
JANTXV2N6758

JANTXV2N6758

MOSFET N-CH 200V 9A TO204AA

Microsemi Corporation
3,431 -

RFQ

JANTXV2N6758

Технические

Bulk Military, MIL-PRF-19500/542 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 490mOhm @ 9A, 10V 4V @ 250µA 39 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANTXV2N6760

JANTXV2N6760

MOSFET N-CH 400V 5.5A TO204AA

Microsemi Corporation
2,291 -

RFQ

JANTXV2N6760

Технические

Bulk Military, MIL-PRF-19500/542 Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1.22Ohm @ 5.5A, 10V 4V @ 250µA 39 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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