Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK5R3E08QM,S1X

TK5R3E08QM,S1X

UMOS10 TO-220AB 80V 5.3MOHM

Toshiba Semiconductor and Storage
3,056 -

RFQ

TK5R3E08QM,S1X

Технические

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 5.3mOhm @ 50A, 10V 3.5V @ 700µA 55 nC @ 10 V ±20V 3980 pF @ 40 V - 150W (Tc) 175°C Through Hole
IQE030N06NM5ATMA1

IQE030N06NM5ATMA1

TRENCH 40<-<100V PG-TSON-8

Infineon Technologies
3,677 -

RFQ

IQE030N06NM5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 137A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N6796

2N6796

MOSFET N-CH 100V 8A TO39

Microsemi Corporation
2,698 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 180mOhm @ 5A, 10V 4V @ 250mA 6.34 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IQE030N06NM5CGATMA1

IQE030N06NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

Infineon Technologies
3,216 -

RFQ

IQE030N06NM5CGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 137A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
2N6796U

2N6796U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation
2,546 -

RFQ

2N6796U

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 180mOhm @ 5A, 10V 4V @ 250mA 6.34 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6798

2N6798

MOSFET N-CH 200V 5.5A TO39

Microsemi Corporation
2,636 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 5.29 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6798U

2N6798U

MOSFET N-CH 200V 5.5A 18ULCC

Microsemi Corporation
3,542 -

RFQ

2N6798U

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 5.29 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6800

2N6800

MOSFET N-CH 400V 3A TO39

Microsemi Corporation
3,803 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1Ohm @ 2A, 10V 4V @ 250µA 5.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6800U

2N6800U

MOSFET N-CH 400V 3A 18ULCC

Microsemi Corporation
2,389 -

RFQ

2N6800U

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1Ohm @ 2A, 10V 4V @ 250µA 5.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6802

2N6802

MOSFET N-CH 500V 2.5A TO39

Microsemi Corporation
2,535 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 4.46 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6802U

2N6802U

MOSFET N-CH 500V 2.5A 18ULCC

Microsemi Corporation
3,508 -

RFQ

2N6802U

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 4.46 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6849

2N6849

MOSFET P-CH 100V 6.5A TO39

Microsemi Corporation
3,937 -

RFQ

2N6849

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6849U

2N6849U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation
3,161 -

RFQ

2N6849U

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 300mOhm @ 4.1A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD6N50CTM

FQD6N50CTM

MOSFET N-CH 500V 4.5A DPAK

onsemi
3,991 -

RFQ

FQD6N50CTM

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 61W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD9N25TM

FQD9N25TM

MOSFET N-CH 250V 7.4A DPAK

onsemi
2,475 -

RFQ

FQD9N25TM

Технические

Tape & Reel (TR),Cut Tape (CT) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD4141-F085

FDD4141-F085

MOSFET P-CH 40V 10.8A/50A DPAK

onsemi
2,401 -

RFQ

FDD4141-F085

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta), 50A (Tc) 4.5V, 10V 12.3mOhm @ 12.7A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2775 pF @ 20 V - 2.4W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS4141-F085

FDS4141-F085

MOSFET P-CH 40V 10.8A 8SOIC

onsemi
2,578 -

RFQ

FDS4141-F085

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta) 4.5V, 10V 13mOhm @ 10.5A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 2005 pF @ 20 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AON7520

AON7520

MOSFET N-CH 30V 48A/50A 8DFN

Alpha & Omega Semiconductor Inc.
3,690 -

RFQ

AON7520

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta), 50A (Tc) 2.5V, 10V 1.8mOhm @ 20A, 10V 1.2V @ 250µA 105 nC @ 10 V ±12V 4175 pF @ 15 V - 6.2W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOB12N60FDL

AOB12N60FDL

MOSFET N-CH 600V 12A TO263

Alpha & Omega Semiconductor Inc.
2,713 -

RFQ

AOB12N60FDL

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 2010 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8327STR1PBF

IRF8327STR1PBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,496 -

RFQ

IRF8327STR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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