| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHA15N60E-GE3N-CHANNEL 600V Vishay Siliconix |
2,627 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N6901MOSFET N-CH 100V 1.69A TO205AF Microsemi Corporation |
2,020 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/570 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.69A (Tc) | 5V | 1.4Ohm @ 1.07A, 5V | 2V @ 1mA | 5 nC @ 5 V | ±10V | - | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N7224MOSFET N-CH 100V 34A TO254AA Microsemi Corporation |
3,965 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 10V | 81mOhm @ 34A, 10V | 4V @ 250µA | 125 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N7224UMOSFET N-CH 100V 34A TO267AB Microsemi Corporation |
3,766 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 10V | 81mOhm @ 34A, 10V | 4V @ 250µA | 125 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
JANTXV2N7225MOSFET N-CH 200V 27.4A TO254AA Microsemi Corporation |
2,935 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 27.4A (Tc) | 10V | 105mOhm @ 27.4A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N7225UMOSFET N-CH 200V 27.4A TO267AB Microsemi Corporation |
3,376 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 27.4A (Tc) | 10V | 105mOhm @ 27.4A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
JANTXV2N7227MOSFET N-CH 400V 14A TO254AA Microsemi Corporation |
2,074 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 415mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N7227UMOSFET N-CH 400V 14A TO267AB Microsemi Corporation |
2,242 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 415mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
JANTXV2N7228MOSFET N-CH 500V 12A TO254AA Microsemi Corporation |
2,990 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 515mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
JANTXV2N7228UMOSFET N-CH 500V 12A TO267AB Microsemi Corporation |
2,224 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/592 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 515mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
EPC2036GANFET N-CH 100V 1.7A DIE EPC |
292,689 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 1.7A (Ta) | 5V | 65mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91 nC @ 5 V | +6V, -4V | 90 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2040GANFET NCH 15V 3.4A DIE EPC |
65,528 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 15 V | 3.4A (Ta) | 5V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93 nC @ 5 V | - | 105 pF @ 6 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2037GANFET N-CH 100V 1.7A DIE EPC |
573,306 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 1.7A (Ta) | 5V | 550mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12 nC @ 5 V | +6V, -4V | 14 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2038GANFET N-CH 100V 500MA DIE EPC |
278,060 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 500mA (Ta) | 5V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044 nC @ 5 V | +6V, -4V | 8.4 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2039GANFET N-CH 80V 6.8A DIE EPC |
52,910 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 80 V | 6.8A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4 nC @ 5 V | +6V, -4V | 210 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2052GANFET N-CH 100V 8.2A DIE EPC |
145,963 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 8.2A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5 nC @ 5 V | +6V, -4V | 575 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
JANTXV2N7236MOSFET P-CH 100V 18A TO254AA Microsemi Corporation |
2,150 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/595 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 220mOhm @ 18A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | - | - | 4W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
EPC2054TRANS GAN 200V DIE 60MOHM EPC |
4,369 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 3A (Ta) | 5V | 43mOhm @ 1A, 5V | 2.5V @ 1mA | 4.3 nC @ 5 V | +6V, -4V | 573 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
JANTXV2N7236UMOSFET P-CH 100V 18A TO267AB Microsemi Corporation |
2,078 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/595 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 220mOhm @ 18A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | - | - | 4W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
EPC2007CGANFET N-CH 100V 6A DIE OUTLINE EPC |
43,284 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | +6V, -4V | 220 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |