| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N6764MOSFET N-CH 100V 38A TO3 Microsemi Corporation |
3,507 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 65mOhm @ 38A, 10V | 4V @ 250µA | 125 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
EPC2055GANFET N-CH 40V 29A DIE EPC |
9,166 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 29A (Ta) | 5V | 3.6mOhm @ 15A, 5V | 2.5V @ 7mA | 8.5 nC @ 5 V | +6V, -4V | 1111 pF @ 20 V | Standard | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
2N6766MOSFET N-CH 200V 30A TO3 Microsemi Corporation |
3,228 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 90mOhm @ 30A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
2N6766T1MOSFET N-CH 200V 30A TO254AA Microsemi Corporation |
3,619 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 90mOhm @ 30A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
EPC2012CGANFET N-CH 200V 5A DIE OUTLINE EPC |
38,506 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 5A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3 nC @ 5 V | +6V, -4V | 140 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2202GANFET N-CH 80V 18A DIE EPC |
13,988 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 80 V | 18A (Ta) | 5V | 17mOhm @ 11A, 5V | 2.5V @ 3mA | 4 nC @ 5 V | +5.75V, -4V | 415 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2212GANFET N-CH 100V 18A DIE EPC |
188,611 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 18A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4 nC @ 5 V | +6V, -4V | 407 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2207TRANS GAN 200V DIE .022OHM EPC |
12,384 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 14A (Ta) | 5V | 22mOhm @ 14A, 5V | 2.5V @ 2mA | 5.9 nC @ 5 V | +6V, -4V | 600 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2019GANFET N-CH 200V 8.5A DIE EPC |
100,849 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 8.5A (Ta) | 5V | 42mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.9 nC @ 5 V | +6V, -4V | 288 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2065GAN FET 80V .0036OHM 8BUMP DIE EPC |
7,275 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 80 V | 60A (Ta) | 5V | 3.6mOhm @ 25A, 5V | 2.5V @ 7mA | 12.2 nC @ 5 V | +6V, -4V | 1449 pF @ 40 V | Standard | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2053GANFET N-CH 100V 48A DIE EPC |
27,717 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 48A (Ta) | 5V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 14.8 nC @ 5 V | +6V, -4V | 1895 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2015CGANFET N-CH 40V 53A DIE EPC |
21,387 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 53A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7 nC @ 5 V | +6V, -4V | 1180 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2218GANFET N-CH 100V DIE EPC |
62,985 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 60A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 7mA | 16.3 nC @ 5 V | +6V, -4V | 2703 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
|
EPC2001CGANFET N-CH 100V 36A DIE OUTLINE EPC |
168,709 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 36A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 9 nC @ 5 V | +6V, -4V | 900 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2215GAN TRANS 200V 8MOHM BUMPED DIE EPC |
33,623 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 32A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 6mA | 17.7 nC @ 5 V | +6V, -4V | 1790 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2010CGANFET N-CH 200V 22A DIE OUTLINE EPC |
13,065 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 22A (Ta) | 5V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3 nC @ 5 V | +6V, -4V | 540 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2206GANFET N-CH 80V 90A DIE EPC |
105,383 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 80 V | 90A (Ta) | 5V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19 nC @ 5 V | +6V, -4V | 1940 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2031GANFET NCH 60V 31A DIE EPC |
17,540 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 60 V | 31A (Ta) | - | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17 nC @ 5 V | - | 1800 pF @ 300 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
NVMFS5C426NWFAFT1GMOSFET N-CH 40V 41A/235A 5DFN onsemi |
2,528 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NTMFS5C645NT1G60 V 4.5 M 94 A SINGLE N CHANNEL onsemi |
2,762 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 94A (Tc) | 10V | 4.5mOhm @ 50A, 10V | 4V @ 250µA | 20.4 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 3.7W (Ta), 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |