| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFS7434-7PPBFMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
3,697 | - |
RFQ |
Технические |
Tube | HEXFET®, StrongIRFET™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMTH10H2M5STLWQ-13MOSFET BVDSS: 61V~100V,POWERDI10 Diodes Incorporated |
3,013 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 2.5mOhm @ 30A, 10V | 4V @ 250µA | 124.4 nC @ 10 V | ±20V | 8450 pF @ 50 V | - | 5.8W (Ta), 230.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR7446PBFMOSFET N-CH 40V 56A TO252 Infineon Technologies |
3,589 | - |
RFQ |
Технические |
Tube | HEXFET®, StrongIRFET™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 6V, 10V | 3.9mOhm @ 56A, 10V | 3.9V @ 100µA | 130 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 98W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NVBLS1D7N08HMOSFET - POWER, SINGLE N-CHANNEL onsemi |
3,883 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 33A (Ta), 241.3A (Tc) | 10V | 1.7mOhm @ 80A, 10V | 4V @ 479µA | 121 nC @ 10 V | ±20V | 7675 pF @ 40 V | - | 4.4W (Ta), 237.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHK185N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix |
2,404 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 185mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FCMT099N65S3MOSFET N-CH 650V 30A POWER88 onsemi |
2,374 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 56 nC @ 10 V | ±30V | 2270 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDP030N06B-F102MOSFET N-CH 60V 120A TO220-3 onsemi |
2,222 | - |
RFQ |
Технические |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±20V | 8030 pF @ 30 V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
PJP60R290E_T0_00001600V N-CHANNEL SUPER JUNCTION MO Panjit International Inc. |
3,989 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.7A (Ta), 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 1013 pF @ 25 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IPA60R299CPXKN-CHANNEL POWER MOSFET Infineon Technologies |
3,280 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIRS700DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
2,433 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta), 127A (Tc) | 7.5V, 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 5950 pF @ 50 V | - | 7.4W (Ta),132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NP70N04MUG-S18-AYMOSFET N-CH 40V 70A TO220 Renesas Electronics America Inc |
2,325 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | - | 5mOhm @ 35A, 10V | 4V @ 250µA | 90 nC @ 10 V | - | 4900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole |
|
RF1S9640SM9AP-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,325 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 500mOhm @ 6A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRL540PBF-BE3MOSFET N-CH 100V 28A TO220AB Vishay Siliconix |
2,649 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | - | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPW50R199CPN-CHANNEL POWER MOSFET Infineon Technologies |
2,270 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SSM6J501NU,LFMOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage |
2,272 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9 nC @ 4.5 V | ±8V | 2600 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
TP0610K-T1-E3MOSFET P-CH 60V 185MA SOT23-3 Vishay Siliconix |
487,467 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7 nC @ 15 V | ±20V | 23 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLML6244TRPBFMOSFET N-CH 20V 6.3A SOT23 Infineon Technologies |
620,162 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.3A (Ta) | 2.5V, 4.5V | 21mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9 nC @ 4.5 V | ±12V | 700 pF @ 16 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
UPA2600T1R-E2-AXMOSFET N-CH 20V 7A 6HUSON Renesas Electronics America Inc |
2,852 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 2.5V, 4.5V | 19.1mOhm @ 3.5A, 2.5V | - | 7.9 nC @ 10 V | ±12V | 870 pF @ 10 V | - | 2.4W (Ta) | 150°C (TJ) | Surface Mount |
|
UPA2630T1R-E2-AXMOSFET P-CH 12V 7A 6HUSON Renesas Electronics America Inc |
3,493 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 7A (Ta) | 1.8V, 4.5V | 59mOhm @ 3.5A, 1.8V | - | 11.3 nC @ 4.5 V | ±8V | 1260 pF @ 10 V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount |
|
UPA2764T1A-E2-AYMOSFET N-CH 30V 130A 8HVSON Renesas Electronics America Inc |
2,911 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 130A (Ta) | 4.5V, 10V | 2.45mOhm @ 35A, 4.5V | - | 180 nC @ 10 V | ±20V | 7930 pF @ 10 V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount |